13 results on '"Ushiki T"'
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2. Reduction of plasma-induced gate oxide damage using low-energy large-mass ion bombardment in gate-metal sputtering deposition
3. A high image-quality LCD addressed by lateral MIM.
4. Threshold voltage adjustment in SOI MOSFETs by employing tantalum for gate material.
5. Effect of starting SOI material quality on low-frequency noise characteristics in partially depleted floating-body SOI MOSFETs.
6. Highly-reliable, low-resistivity bcc-Ta gate MOS technology using low-damage Xe-plasma sputtering and Si-encapsulated silicidation process
7. Threshold voltage adjustment in SOI MOSFETs by employing tantalum for gate material
8. Tantalum-gate SOI MOSFET's featuring excellent threshold voltage control in low-power applications
9. Cell-based echo canceller for voice communications over ATM networks
10. Evidence of energetically-localized trap-states at SOI-BOX interface in high-dose SIMOX wafers.
11. Highly-reliable, low-resistivity bcc-Ta gate MOS technology using low-damage Xe-plasma sputtering and Si-encapsulated silicidation process.
12. Tantalum-gate SOI MOSFET's featuring excellent threshold voltage control in low-power applications.
13. Cell-based echo canceller for voice communications over ATM networks.
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