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This article investigates the single-event effects on 16-nm bulk field-effect transistors (FinFETS) in terms of single-bit upsets and multiple-cell upsets under heavy ion irradiation. These upsets are analyzed and classified according to voltage, linear energy transfer of ions, data patterns, and fail bit patterns. The analysis suggested a characteristic charge collection mechanism attributable to the FinFET structure. Estimation of a unique sensitive area shape based on cross sections is also discussed. [ABSTRACT FROM AUTHOR]

Static random access memories (SRAMs) are prone to a single-event upset (SEU), also known as soft errors, due to transient noise caused by a single strike of radiation. Beam testing has been extensively used to measure the SEU cross section of SRAMs as a function of the linear energy transfer (LET) of charged particle radiation. The evolution of the cross section as a function of LET is called the cross section curve, which plays a vital role in upset rate analysis for hardness assurance. Various analytical models have been developed to describe SRAM SEU cross section curves, and they have proven to be useful in reducing the cost of beam testing as well as revealing the physics behind test results. However, they involve arbitrary parameters, which make it challenging to predict cross section curves without any beam results. Moreover, the current method of analyzing cross section curves or the LET dependence of cross sections relies on a model different from that is used in the analysis of power-supply-voltage dependence, which is becoming increasingly important because of the demand for low-power operation. To overcome these problems, this article proposes a unified equation that describes both LET and the power-supply-voltage dependence of SRAM SEU cross sections. It comprises only parameters that are physically clear and familiar to SEU researchers. As well as giving possible constraints, comparisons with data from the literature suggest it can be applied to SRAMs fabricated in bulk and silicon-on-insulator (SOI) processes across generations from the early 1000-nm-scale to the current 10-nm-scale technology nodes. [ABSTRACT FROM AUTHOR]

In this paper, we propose a new Quartz Crystal Microbalance (QCM) sensor with temperature control, which can assess outgassing properties during spacecraft development. It will be referred to as the “Twin-QCM sensor.” There are two types. The Twin-Cryogenic QCM (Twin-CQCM) sensor is warmed by a built-in heater with an operating temperature of −190 to + 125° C, and the Twin-Thermoelectric QCM (Twin-TQCM) sensor is warmed and cooled by a built-in Peltier module that can control the temperature within −80 to + 125° C. Using a temperature compensation technique, the temperature-dependent drift of the frequency was found to be less than ±10 ppm over all operating temperatures. An RTD temperature sensor was mounted on the quartz crystal to improve the accuracy of temperature measurement. To confirm the accuracy, an additional temperature sensor installed at the center of the crystal. The sensor output temperature value was compared to that of the additional sensor, with the difference between both temperature sensors being +0.4 to + 2.6° C in the temperature range from −130 to + 100° C. Through the measurement of the sensor’s dynamic range, it was found that the deposited contaminant film in a vacuum increasingly changed such physical properties as viscoelasticity as the temperature increases. [ABSTRACT FROM AUTHOR]