7 results on '"Thibeault, B. J."'
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2. Performance impact of post-regrowth channel etching on InGaAs MOSFETs having MOCVD source-drain regrowth
3. Formation of sub-10 nm width InGaAs finFETs of 200 nm height by atomic layer epitaxy
4. THz Indium Phosphide Bipolar Transistor Technology
5. 60 nm gate length Al2O3 / In0.53Ga0.47As gate-first MOSFETs using InAs raised source-drain regrowth
6. III-V MOSFETs: Scaling laws, scaling limits, fabrication processes
7. Record extrinsic transconductance (2.45 mS/µm at VDS = 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth.
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