1. All-Graphene Planar Double-Quantum-Dot Resonant Tunneling Diodes
- Author
-
Efstratios Skafidas, Feras Al-Dirini, Faruque M. Hossain, Mahmood A. Mohammed, and Thas Nirmalathas
- Subjects
Materials science ,Resonant-tunneling diode ,Quantum Dot ,02 engineering and technology ,Negative Differential Resistance ,01 natural sciences ,law.invention ,Planar ,law ,Quantum mechanics ,0103 physical sciences ,NDR ,Electrical and Electronic Engineering ,Quantum well ,Quantum tunnelling ,Tunable ,Diode ,010302 applied physics ,Graphene ,business.industry ,Heterojunction ,021001 nanoscience & nanotechnology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Electronic, Optical and Magnetic Materials ,Quantum dot ,Optoelectronics ,lcsh:Electrical engineering. Electronics. Nuclear engineering ,0210 nano-technology ,business ,lcsh:TK1-9971 ,Biotechnology - Abstract
This paper proposes a new class of resonant tunneling diodes (RTDs) that are planar and realizable with a single graphene nanoribbon. Unlike conventional RTDs, which incorporate vertical quantum well regions, the proposed devices incorporate two confined planar quantum dots within the single graphene nanoribbon, giving rise to a pronounced negative differential resistance (NDR) effect. The proposed devices, termed here as planar double-quantum-dot RTDs, and their transport properties are investigated using quantum simulations based on nonequilibrium Green’s function formalism and the extended Huckel method. The proposed devices exhibit a unique current–voltage waveform consisting of a single pronounced current peak with an extremely high, in the order of $10^{4}$ , peak-to-valley ratio. The position of the current peak can be tuned between discrete voltage levels, allowing digitized tunability, which is exploited to realize multi-peak NDR devices.
- Published
- 2016