201 results on '"Takenaka M"'
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2. Low-capacitance Ultrathin InGaAs Membrane Photodetector on Si Slot Waveguide towards Receiver-less System
3. Experimental demonstration of novel scheme of HZO/Si FeFET reservoir computing with parallel data processing for speech recognition
4. Optimum Design of Channel Material and Surface Orientation for Extremely-Thin-Body nMOSFETs under New Modeling of Surface Roughness Scattering
5. Silicon Photonics Beyond Optical Interconnects
6. Bandgap-tunable III‐V‐OI Photonics Platform with Quantum Well Intermixing for Versatile Active-passive Integration of Chip-scale Photonic Integrated Circuits
7. Characterization of Slow Traps in SiGe MOS Interfaces by TiN/Y2O3 Gate Stacks
8. Subband Engineering by Combination of Channel Thickness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs
9. Proposal and Experimental Demonstration of Reservoir Computing using Hf0.5Zr0.5O2/Si FeFETs for Neuromorphic Applications
10. Asymmetric Polarization Response of Electrons and Holes in Si FeFETs: Demonstration of Absolute Polarization Hysteresis Loop and Inversion Hole Density over 2×1013 cm−2
11. Strain and surface orientation engineering in extremely-thin body Ge and SiGe-on-insulator MOSFETs fabricated by Ge condensation
12. Direct Observation of Interface Charge Behaviors in FeFET by Quasi-Static Split C-V and Hall Techniques: Revealing FeFET Operation
13. Improvement of SiGe MOS interface properties with a wide range of Ge contents by using TiN/Y2O3 gate stacks with TMA nassivation
14. Characterization and understanding of slow traps in GeOx-based n-Ge MOS interfaces
15. Ge-on-Insulator Platform for Mid-Infrared Integrated Photonics
16. Hole mobility enhancement in extremely-thin-body strained GOI and SGOI pMOSFETs by improved Ge condensation method
17. Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment
18. III-V/Ge-based tunneling MOSFET
19. High performance 4.5-nm-thick compressively-strained Ge-on-insulator pMOSFETs fabricated by Ge condensation with optimized temperature control
20. III–V-based low power CMOS devices on Si platform
21. In content dependence of pre-treatment effects on Al2O3/InxGa1−xAs MOS interface properties
22. Quantitative evaluation of energy distribution of interface trap density at MoS2 MOS interfaces by the Terman method
23. Tunneling MOSFET technologies using III-V/Ge materials
24. Impact of La2O3/InGaAs MOS interface on InGaAs MOSFET performance and its application to InGaAs negative capacitance FET
25. Extremely high modulation efficiency iii-v/si hybrid mos optical modulator fabricated by direct wafer bonding
26. Performance improvement of InxGa1−xAs Tunnel FETs with Quantum Well and EOT scaling
27. CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V on Si
28. First demonstration of Ge waveguide platform on Ge-on-insulator for mid-infrared integrated photonics
29. III–V and Ge/strained SOI tunneling FET technologies for low power LSIs
30. High hole mobility front-gate InAs/InGaSb-OI single structure CMOS on Si
31. Impact of La2O3/InGaAs MOS Interfaces on the Performance of InGaAs MOSFETs.
32. Low-Resistance Lateral Junction Formation for Laser Diodes on III-V CMOS Photonics Platform
33. Record-low Injection-current Strained SiGe variable optical attenuator with optimized lateral PIN junction
34. The effects of biaxially-tensile strain to properties of Si/SiO2 interface states generated by electrical stress
35. High performance InGaAs-on-insulator MOSFETs on Si by novel direct wafer bonding technology applicable to large wafer size Si
36. III–V single structure CMOS by using ultrathin body InAs/GaSb-OI channels on Si
37. High mobility strained-Ge pMOSFETs with 0.7-nm ultrathin EOT using plasma post oxidation HfO2/Al2O3/GeOx gate stacks and strain modulation
38. High performance sub-20-nm-channel-length extremely-thin body InAs-on-insulator tri-gate MOSFETs with high short channel effect immunity and Vth tunability
39. Ultra-thin body MOS device technologies using high mobility channel materials
40. Evaluation of chemical potential for graphene optical modulators based on the semiconductor-metal transition
41. Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs
42. MOS interface and channel engineering for high-mobility Ge/III-V CMOS
43. Improvement of SiGe MOS interfaces by plasma post-nitridation for SiGe high-k MOS optical modulators
44. Self-aligned metal S/D GaSb p-MOSFETs using Ni-GaSb alloys
45. Sub-60 nm deeply-scaled channel length extremely-thin body InxGa1−xAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D and MOS interface buffer engineering
46. High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation
47. Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation
48. Enhancement technologies and physical understanding of electron mobility in III–V n-MOSFETs with strain and MOS interface buffer engineering
49. Ultralow-dark-current Ge photodetector with GeO2 passivation and gas-phase doped junction
50. Cylindrical atomospheric plasma source using paralell mhcd and repetitive impulse voltage to the third axial electrode
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