1. Resonant Photocurrent at 1550 nm in an Erbium Low-Doped Silicon Transistor at Room Temperature
- Author
-
Yuki Chiba, Giorgio Ferrari, Takashi Tanii, Michele Celebrano, Marco Finazzi, Lavinia Ghirardini, Ayman Abdelghafar, Takahiro Shinada, Maasa Yano, Keinan Gi, and Enrico Prati
- Subjects
010302 applied physics ,Photocurrent ,Materials science ,Silicon ,business.industry ,Doping ,Transistor ,Physics::Optics ,Resonance ,chemistry.chemical_element ,02 engineering and technology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Laser ,01 natural sciences ,Supercontinuum ,law.invention ,Erbium ,chemistry ,law ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business - Abstract
We report on the photocurrent induced by 1550 nm laser irradiation in a Er-doped micron-scale silicon transistor. The erbium defects, activated in the channel of the transistor thanks to oxygen codoping, make it possible to observe a resonant photocurrent at telecom wavelength and at room temperature by using a supercontinuum laser source working in the $\mu\mathrm {W}$ range. By exploiting a back-gate, the transistor is tuned to exploit only the electrons lying in the Er-O states. We estimate a relatively small number of photoexcited atoms $(\sim 4\times 10^{4})$ making Er-dpoed silicon a candidate for designing resonance-based frequency selective single photon detectors at 1550 nm for quantum communications.
- Published
- 2019