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3 results on '"Suhua Luo"'

1. Direct Power Based Control Strategy for DAB DC-DC Converter With Cooperative Triple Phase Shifted Modulation

Author

Yong Dai, Suhua Luo, and Zhongwei Li

Subjects
Closed-loop control, direct power control, dual active bridge DC-DC converter, triple phase shift, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

The cooperative triple-phase-shifted modulation (CTPS) for the isolated dual-active bridge (DAB) DC-DC converter has the advantages of zero dual-DC side flow back currents and best current characteristics. However, the mathematical model and corresponding closed-loop control configuration of the DAB converter driven by CTPS are not presented so far. In order to solve this problem, in this paper, the average state space model of the DAB converter driven by CTPS is established for the first time. It is proven that the DAB converter driven by CTPS is a zero-order system and it is not necessary to construct an inner inductor current closed-loop control loop in the entire closed-loop control configuration of DAB converter. Furthermore, the average power model is derived. Two control strategies based on the resulted average power model when the DAB converter is connected to DC microgrid or a pure resistive load are proposed to realize the precise control of the transfer power or the output voltage, respectively. The detailed experimental results verify the correctness of the established mathematical model and the closed-loop control strategies.

Published
2021
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2. The thermal stability of zirconium aluminate high-k film on strained SiGe layer

Author

Miao Zhang, Suhua Luo, Chenglu Lin, Weili Liu, Zhitang Song, Zhengxuan Zhang, Zhenghua An, and Zengfeng Di

Subjects
Zirconium, Materials science, chemistry, X-ray photoelectron spectroscopy, Annealing (metallurgy), Transmission electron microscopy, X-ray crystallography, Analytical chemistry, chemistry.chemical_element, High-resolution transmission electron microscopy, High-κ dielectric, Amorphous solid
Abstract

Zr/sub 0.6/Al/sub 0.4/O/sub 1.8/ dielectric films were deposited directly on strained SiGe substrate at room temperature by ultra-high vacuum electron-beam evaporation (UHV-EBE) and then annealed in N/sub 2/ under various temperatures. X-ray diffraction (XRD) reveals that the onset crystallization temperature of the Zr/sub 0.6/Al/sub 0.4/O/sub 1.8/ film is about 900/spl deg/C, 400/spl deg/C higher than that of pure ZrO/sub 2/. The amorphous Zr/sub 0.6/Al/sub 0.4/O/sub 1.8/ film with a physical thickness of /spl sim/ 12 nm and an amorphous interfacial layer (IL) with a physical thickness of /spl sim/3 nm have been observed by high-resolution transmission electron microscopy (HRTEM). In addition, it is demonstrated there is no undesirable amorphous phase separation during annealing at temperatures below and equal to 800/spl deg/C in the Zr/sub 0.6/Al/sub 0.4/O/sub 1.8/ film. X-ray photoelectron spectroscopy (XPS) reveals that zirconium and aluminum are both in the fully oxidation states.

Published
2004
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