12 results on '"Suda J"'
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2. Current Status and Future Prospects of GaN-on-GaN Vertical Power Devices
3. Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination
4. Ion implantation technology in SiC for high-voltage/high-temperature devices
5. Progress in ultrahigh-voltage SiC devices for future power infrastructure
6. 4H-SiC bipolar junction transistors with record current gains of 257 on (0001) and 335 on (000–1).
7. 4H-SiC Double RESURF MOSFETs with a Record Performance by Increasing RESURF Dose.
8. Dose Designing and Fabrication of 4H-SiC Double RESURF MOSFETs.
9. 1200 V-Class 4H-SiC RESURF MOSFETs with Low On-Resistances.
10. Dose Designing and Fabrication of 4H-SiC Double RESURF MOSFETs
11. Tight-binding study of size and geometric effects on hole effective mass of silicon nanowires.
12. Demonstration of SiC heterojunction bipolar transistors with AlN/GaN short-period superlattice widegap emitter.
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