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A new interstage matching technique is presented for design of a wide-band multi-stage amplifier using commercial 60 nm GaN-on-silicon technology in the W-band. The proposed interstage matching network is designed as a two-pole conjugated impedance matching approach for wideband characteristics using low-characteristic impedance transmission lines and an optimized microstrip-coupled line. In particular, the microstrip-coupled line provides strong resonance at the desired frequency, enabling optimal conjugate impedance matching of both edge and intermediate frequencies simultaneously. The implemented W-band three-stage amplifier using the proposed interstage matching technique exhibited a small-signal gain above 14.1 dB from 75 to 103 GHz. Also, the output power between 92-100 GHz was greater than 25 dBm, and the maximum output power at 96 GHz was 25.8 dBm. The W-band amplifier was designed with an area of 2 mm $\times1.2$ mm.

In this paper, a W-band mixer integrated circuit (IC) with high image rejection ratio (IRR) is presented, compensating for the amplitude and phase mismatches between the I and Q channels in the image rejection mixer (IRM) using RF buffer amplifiers. It is shown by analysis and simulation that the signal coupling between the I and Q channels in the IRM can generate mismatches which can severely degrade the IRR, even though other circuit components are symmetrically designed so as not to induce mismatches. The coupling between two channels can become serious, especially in millimeter-wave IRM ICs where the circuit components are laid out in close proximity to reduce the chip size. It is also shown that poor isolation of millimeter-wave couplers can seriously degrade IRR. In this work, we employ an RF buffer amplifier at the RF port of the resistive mixer to compensate for the amplitude and phase mismatches. The designed W-band IRM IC is fabricated in a 0.1-μm GaAs pHEMT process. Measurements show that the bias tuning of the RF buffer amplifiers can minimize the mismatches and improve the IRR by up to 35 dB at RF from 91 to 95 GHz at an IF of 50 MHz. The IRM exhibits an IRR of 19.2-47.9 dB with conversion loss of 7.9-9.2 dB, which belongs to the highest IRR among the reported IRMs in the W-band.