1. Comprehensive modeling of gas sensor based on Si3N4-passivated AlGaN/GaN Schottky diode
- Author
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Rahul Kumar, Dhrubes Biswas, Syed Mukulika Dinara, Sonjoy Majumder, Subhashis Das, and Mihir Kumar Mahata
- Subjects
Materials science ,Passivation ,business.industry ,Schottky barrier ,Wide-bandgap semiconductor ,Schottky diode ,Gallium nitride ,Biasing ,Heterojunction ,chemistry.chemical_compound ,chemistry ,Optoelectronics ,business ,Voltage - Abstract
A physics-based analytical modeling for the gas sensor application of AlGaN/GaN heterostructure Schottky diode has been investigated for high linearity and sensitivity of the device. The heterointerface and surface properties are exploited here. The dependency of 2DEG on the surface charge, which is dependent on the Si 3 N 4 passivation layer, is mainly utilized to model the device. The simulation of Schottky diode has been performed in the TCAD tool and I-V curves are generated. From the I-V curves, 54% response has been recorded in presence of 500 ppm gas and at biasing voltage of 0.95 Volts.
- Published
- 2014
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