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Your search keyword '"Someya, T."' showing total 107 results
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107 results on '"Someya, T."'

1. 13.1 A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology

Author

Shibata, N., primary, Kanda, K., additional, Shimizu, T., additional, Nakai, J., additional, Nagao, O., additional, Kobayashi, N., additional, Miakashi, M., additional, Nagadomi, Y., additional, Nakano, T., additional, Kawabe, T., additional, Shibuya, T., additional, Sako, M., additional, Yanagidaira, K., additional, Hashimoto, T., additional, Date, H., additional, Sato, M., additional, Nakagawa, T., additional, Takamoto, H., additional, Musha, J., additional, Minamoto, T., additional, Uda, M., additional, Nakamura, D., additional, Sakurai, K., additional, Yamashita, T., additional, Zhou, J., additional, Tachibana, R., additional, Takagiwa, T., additional, Sugimoto, T., additional, Ogawa, M., additional, Ochi, Y., additional, Kawaguchi, K., additional, Kojima, M., additional, Ogawa, T., additional, Hashiguchi, T., additional, Fukuda, R., additional, Masuda, M., additional, Kawakami, K., additional, Someya, T., additional, Kajitani, Y., additional, Matsumoto, Y., additional, Morozumi, N., additional, Sato, J., additional, Raghunathan, N., additional, Koh, Y. L., additional, Chen, S., additional, Lee, J., additional, Nasu, H., additional, Sugawara, H., additional, Hosono, K., additional, Hisada, T., additional, Kaneko, T., additional, and Nakamura, H., additional

Published
2019
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14. OTFT with PNDT3BT-20 dispersed solution by drop casting method.

Author

Trifunovic, M., Yokota, T., Kato, Y., Tokuhara, T., Hirata, I., Osaka, I., Takimiya, K., Sekitani, T., Someya, T., and Ishihara, R.

Abstract

We present organic TFTs made from the high potential polymer PNDT3BT-20 as dispersed solutions with common organic solvents toluene and xylene. We have fabricated OTFTs using inclined drop-casting of the dispersed solution. A high position dependency was recognized in the device characteristics due to gravitational forces, surface tension and gradual drying of the fluid during the deposition method. The highest obtained mobility was 0.2 cm2/Vs. [ABSTRACT FROM PUBLISHER]

Published
2012

37. Beam-nonuniformity smoothing using density valley formed by ion beam deposition in an ICF fuel pellet.

Author

Sasaki, J., Nakamura, T., Uchida, Y., Someya, T., Shimizu, K., Shitamura, M., Teramoto, T., and Kawata, S.

Abstract

We study the beam non-uniformity smoothing effect of the radiation transport in the density valley formed by an ion-beam deposition in a heavy ion-beam inertial confinement fusion pellet by numerical simulations. The simulation results show that the radiation energy is confined in the density valley, and the beam non-uniformity can be smoothed out by the radiation transport along the density valley. In addition, an estimation for the Rayleigh-Taylor instability growth during the implosion phase is also presented. [ABSTRACT FROM PUBLISHER]

Published
2000

44. A 3-D-Stack Organic Sheet-Type Scanner with Double-Wordline and Double-Bitline Structure.

Author

Kawaguchi, H., Shingo Iba, Kato, Y., Sekitani, T., Someya, T., and Sakurai, T.

Abstract

This paper describes a sheet-type scanner and its circuits. The three-dimensional-stacked sheets comprise of two organic-transistor sheets and one organic-photodiode sheet, which enable double-wordline and double-bitline structure. The operation was compared with the conventional single-wordline and single-bitline scheme, and confirmed by measurement. The double-wordline and double-bitline structure reduces the line delay and power by a factor of five and seven, respectively. A new dynamic decoder reduces active leakage current, to which the cut-and-paste customization can be applied [ABSTRACT FROM PUBLISHER]

Published
2006
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45. Growth of InGaN self-assembled quantum dots and their application to lasers.

Author

Tachibana, K., Someya, T., and Arakawa, Y.

Abstract

We have successfully grown InGaN self assembled quantum dots (QD's) on a GaN layer, using atmospheric-pressure metalorganic chemical vapor deposition (MOCVD). The average diameter of the QD's was as small as 8.4 nm, and strong emission from the QD's was observed at room temperature. Next, we have investigated a structure in which InGaN QD's were stacked to increase the total QD density. InGaN QD's were formed even when the number of stacked layers was ten. As the number of layers increased, the photoluminescence (PL) intensity increased drastically. Moreover, we have fabricated a laser structure with InGaN QD's embedded into the active layer. A clear threshold of 6.0 mJ/cm2 was observed in the dependence of the emission intensity on the excitation energy at room temperature under optical excitation. Above the threshold, the emission was strongly polarized in the transverse electric (TE) mode, and the linewidth of the emission spectra was reduced to below 0.1 nm (resolution limit). The peak wavelength was around 405 nm. These results indicate lasing action at room temperature [ABSTRACT FROM PUBLISHER]

Published
2000
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