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1. Low Dimensional Transition Metal Dichalchogenides FETs Enabled Photosensitive Inverters for IoT Sensor Applications with High Noise Immunity

Author

Seung Gi Seo, Seung Yeob Kim, and Sung Hun Jin

Subjects
Materials science, Noise immunity, business.industry, Spice, Gallium nitride, Hardware_PERFORMANCEANDRELIABILITY, Noise margin, chemistry.chemical_compound, Transition metal, chemistry, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Field-effect transistor, business, Hardware_LOGICDESIGN, Electronic circuit, Degradation (telecommunications)
Abstract

Herein, photo sensitive inverters comprised of an enhancement MoS 2 driver with light-shield layers (LSLs) (or GaN FET drivers) and MoS 2 depletion load. As compared with MoS 2 drivers with LSLs, GaN FET drivers have benefits in the respect of less degradation of gains, leading to the better noise margin of light frequency circuits (LFCs). Moreover, systematic studies on design rules for the better performance of LFCs were performed via experimental data execution and their validation, supported by SPICE simulation.

Published
2019

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