38 results on '"Sampedro, C."'
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2. 3D multi-subband ensemble Monte Carlo simulation of 〈100〉 and 〈110〉 Si nanowire FETs
3. MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections
4. Gate-induced vs. implanted body doping impact on Z2-FET DC operation
5. Three-dimensional multi-subband simulation of scaled FinFETs
6. Multi-subband ensemble Monte Carlo study of tunneling leakage mechanisms
7. Assessment of gate leakage mechanism utilizing Multi-Subband Ensemble Monte Carlo
8. Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs
9. Comparison of semiclassical transport formulations including quantum corrections for advanced devices with High-K gate stacks
10. Multi-subband ensemble Monte Carlo study of band-to-band tunneling in silicon-based TFETs
11. Confinement orientation effects in S/D tunneling
12. Impact of S/D tunneling in ultrascaled devices, a Multi-Subband Ensemble Monte Carlo study
13. Sub-22nm scaling of UTB2SOI devices for Multi-Vt applications
14. Impact of non uniform strain configuration on transport properties for FD14+ devices
15. 3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors
16. Impact of S/D tunneling in ultrascaled devices, a Multi-Subband Ensemble Monte Carlo study.
17. Non-parabolicity in Si-(110) nMOSFETs: Analytic and numerical results for the two-band k · p model
18. Analytical drain current model using temperature dependence model in nanoscale Double-Gate (DG) MOSFETs
19. Combined effect of mechanical stressors and channel orientation on mobility in FDSOI n and p MOSFETs
20. Analytical drain current model reproducing advanced transport models in nanoscale double-gate (DG) MOSFETs
21. Comparison of semiclassical transport formulations including quantum corrections for advanced devices with High-K gate stacks
22. Quantization effects in silicided and metal gate MOSFETs
23. Accurate Simulation of the Electron Density of Surrounding Gate Transistors
24. A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulator
25. Using Grid Infrastructures for a Stationary DGSOI Monte Carlo Simulation
26. Quantum corrected EMC simulation of ultrashort DGSOI devices. Ballistic vs. Diffusive regime
27. Study of the Corner Effects on Pi-Gate SOI MOSFETs
28. Quantum corrected Ensemble Monte Carlo simulation of UTB-DGSOI. Contribution of Volume Inversion and Inter-Subband Modulation effects
29. Analytical drain current model reproducing advanced transport models in nanoscale double-gate (DG) MOSFETs.
30. Multi-Subband Monte Carlo simulation of bulk MOSFETs for the 32nm-node and beyond.
31. Quantum-Monte Carlo simulation of ultra-short DGSOI devices: A Multi-Subband approach.
32. Enhanced electron transport by carrier overshoot in ultrascaled Double Gate MOSFETs.
33. Monte Carlo simulation of velocity modulation transistors.
34. DGSOI devices operated as velocity modulation transistors
35. Monte Carlo simulation of velocity modulation transistors
36. Ballisticity at very low drain bias in DG SOI Nano-MOSFETs.
37. Monte Carlo simulation of electron velocity overshoot in DGSOI MOSFETs.
38. DGSOI devices operated as velocity modulation transistors.
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