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Experimental linear energy transfer values of heavy ions in silicon are presented with comparison to estimations from different semi empirical codes widely used among the community. This paper completes the experimental LET data for the RADEF cocktail ions in silicon. [ABSTRACT FROM AUTHOR]

Researchers performing radiation testing on electronic components often rely on semi-empirical prediction codes for determining the linear energy transfer (LET) (or electronic stopping force) of ions, without paying much attention to their reliability. However, it is seen that estimations calculated with different codes can have over 10% discrepancies, especially in the case of heavy ions with higher LET (e.g., xenon). As a consequence of the modern component fabrication techniques this has become an important issue when studying the radiation durability of electronics. In order to clarify this inconsistency, LET measurements for 131Xe and 82Kr in silicon have been undertaken and obtained results are presented, discussed and compared with earlier predicted data. [ABSTRACT FROM AUTHOR]