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Ultrathin (7 nm) atomic layer deposited Al2O3 layers and high-deposition-rate plasma-enhanced chemical vapor deposited AlOx layers have been applied and characterized as rear-surface passivation for high-efficiency silicon solar cells. The excellent efficiency values (up to 21.3%-21.5%) demonstrate that both aluminum oxide deposition processes have a very high potential comparable to the reference cells with SiO2 passivation. The high voltages (~680 mV), the excellent long-wavelength quantum efficiency, and the high short-circuit currents of these cells (~40 mA/cm²) are a proof for the low rear-surface recombination velocity and excellent internal rear-surface reflection. [ABSTRACT FROM AUTHOR]