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3 results on '"Russell Duane"'

1. Back-gate mirror doping for fully depleted planar SOI transistors with thin buried oxide

Author

Jean-Pierre Colinge, Ran Yan, Bich-Yen Nguten, Russell Duane, Konstantin Bourdelle, Isabelle Ferain, Arvan Afzalian, Nima Dehdashti, Chi-Woo Lee, and Pedram Razavi

Subjects
Materials science, Equivalent series resistance, business.industry, Transistor, Doping, Electrical engineering, Silicon on insulator, Buried oxide, law.invention, Threshold voltage, Planar, law, Optoelectronics, business, Ground plane
Abstract

In this paper, we analyze LDD depletion effects in Fully-Depleted SOI (FDSOI) devices with thin-BOX and ground plane (GP). Back-gate engineering is introduced to reduce the series resistance and threshold voltage shifts. We show that shortchannel effects are rather insensitive to SOI layer thickness variations and remains well controlled for gate lengths down to 15nm.

Published
2010
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2. LDD depletion effects in thin-BOX FDSOI devices with a ground plane

Author

Christopher W. Lee, Bich-Yen Nguyen, Pedram Razavi, Isabelle Ferain, Jean-Pierre Colinge, Ran Yan, Aryan Afzalian, N. Dehdashti-Akhavan, Konstantin Bourdelle, and Russell Duane

Subjects
Drain resistance, Materials science, business.industry, Logic gate, Semiconductor device modeling, Electrical engineering, Optoelectronics, Silicon on insulator, business, Layer thickness, Ground plane, Threshold voltage
Abstract

In this paper, we analyze LDD depletion effects in Fully-Depleted SOI (FDSOI) devices with thin-BOX and ground plane (GP). LDD engineering is introduced to reduce the source and drain resistance and threshold voltage shifts. Short-channel effects are rather insensitive to SOI layer thickness variations and remains well controlled for gate lengths down to 15nm.

Published
2009
Full Text
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