1. High Breakdown Voltage (?201) $\beta $ -Ga2O3 Schottky Rectifiers.
- Author
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Yang, Jiancheng, Ahn, Shihyun, Ren, F., Pearton, S. J., Jang, Soohwan, and Kuramata, A.
- Subjects
BREAKDOWN voltage ,SCHOTTKY-barrier diode manufacturing ,ELECTRIC current rectifiers - Abstract
\beta -Ga2O3 Schottky barrier diodes were fabricated in a vertical geometry structure consisting of Ni/Au rectifying contacts without edge termination on Si-doped epitaxial layers ( 10~\mu \text{m} , \text{n}\sim 4\times 10^{15} cm ^-3) on Sn-doped bulk Ga2O3 substrates with full-area Ti/Au back Ohmic contacts. The reverse breakdown voltage, V _ \text BR , was a function of rectifying contact area, ranging from 1600 V at 3.1\times 10^-6 cm2 (20- \mu \textm diameter) to ~250 V at 2.2\times 10^-3 cm ^-2 (0.53-mm diameter). The current density near breakdown was not strongly dependent on contact circumference but did scale with contact area, indicating that the bulk current contribution was dominant. The lowest ON-state resistance, R _\text on , was 1.6 \textm\Omega \cdot cm2 for the largest diode and 25 \textm\Omega \cdot cm2 for the 1600-V rectifier, leading to a Baliga figure-of-merit ( V _\text BR^2/R _\text on) for the latter of approximately 102.4 MW \cdot cm 3\times 10^{7} to 2.5\times 10^{6}$ for reverse biases from −5 to −40 V and showed only a small dependence on temperature in the range from 25 °C to 100 °C. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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