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Your search keyword '"Rajamani, S."' showing total 11 results
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11 results on '"Rajamani, S."'

1. A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate and cobalt local interconnects

Author

Auth, C., primary, Aliyarukunju, A., additional, Asoro, M., additional, Bergstrom, D., additional, Bhagwat, V., additional, Birdsall, J., additional, Bisnik, N., additional, Buehler, M., additional, Chikarmane, V., additional, Ding, G., additional, Fu, Q., additional, Gomez, H., additional, Han, W., additional, Hanken, D., additional, Haran, M., additional, Hattendorf, M., additional, Heussner, R., additional, Hiramatsu, H., additional, Ho, B., additional, Jaloviar, S., additional, Jin, I., additional, Joshi, S., additional, Kirby, S., additional, Kosaraju, S., additional, Kothari, H., additional, Leatherman, G., additional, Lee, K., additional, Leib, J., additional, Madhavan, A., additional, Marla, K., additional, Meyer, H., additional, Mule, T., additional, Parker, C., additional, Parthasarathy, S., additional, Pelto, C., additional, Pipes, L., additional, Post, I., additional, Prince, M., additional, Rahman, A., additional, Rajamani, S., additional, Saha, A., additional, Santos, J. Dacuna, additional, Sharma, M., additional, Sharma, V., additional, Shin, J., additional, Sinha, P., additional, Smith, P., additional, Sprinkle, M., additional, Amour, A. St., additional, Staus, C., additional, Suri, R., additional, Towner, D., additional, Tripathi, A., additional, Tura, A., additional, Ward, C., additional, and Yeoh, A., additional

Published
2017
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2. Low-k interconnect stack with multi-layer air gap and tri-metal-insulator-metal capacitors for 14nm high volume manufacturing

Author

Fischer, K., primary, Agostinelli, M., additional, Allen, C., additional, Bahr, D., additional, Bost, M., additional, Charvat, P., additional, Chikarmane, V., additional, Fu, Q., additional, Ganpule, C., additional, Haran, M., additional, Heckscher, M., additional, Hiramatsu, H., additional, Hwang, E., additional, Jain, P., additional, Jin, I., additional, Kasim, R., additional, Kosaraju, S., additional, Lee, K. S., additional, Liu, H., additional, McFadden, R., additional, Nigam, S., additional, Patel, R., additional, Pelto, C., additional, Plekhanov, P., additional, Prince, M., additional, Puls, C., additional, Rajamani, S., additional, Rao, D., additional, Reese, P., additional, Rosenbaum, A., additional, Sivakumar, S., additional, Song, B., additional, Uncuer, M., additional, Williams, S., additional, Yang, M., additional, Yashar, P., additional, and Natarajan, S., additional

Published
2015
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3. A 14nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm2 SRAM cell size

Author

Natarajan, S., primary, Agostinelli, M., additional, Akbar, S., additional, Bost, M., additional, Bowonder, A., additional, Chikarmane, V., additional, Chouksey, S., additional, Dasgupta, A., additional, Fischer, K., additional, Fu, Q., additional, Ghani, T., additional, Giles, M., additional, Govindaraju, S., additional, Grover, R., additional, Han, W., additional, Hanken, D., additional, Haralson, E., additional, Haran, M., additional, Heckscher, M., additional, Heussner, R., additional, Jain, P., additional, James, R., additional, Jhaveri, R., additional, Jin, I., additional, Kam, H., additional, Karl, E., additional, Kenyon, C., additional, Liu, M., additional, Luo, Y., additional, Mehandru, R., additional, Morarka, S., additional, Neiberg, L., additional, Packan, P., additional, Paliwal, A., additional, Parker, C., additional, Patel, P., additional, Patel, R., additional, Pelto, C., additional, Pipes, L., additional, Plekhanov, P., additional, Prince, M., additional, Rajamani, S., additional, Sandford, J., additional, Sell, B., additional, Sivakumar, S., additional, Smith, P., additional, Song, B., additional, Tone, K., additional, Troeger, T., additional, Wiedemer, J., additional, Yang, M., additional, and Zhang, K., additional

Published
2014
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6. Simulation study of the electrophysiological mechanisms for heart failure phenotype.

Author

Cardona, K, Gomez, J F, Ferrero, J M, Saiz, J, Rajamani, S, Belardinelli, L, and Trenor, B

Abstract

Prolongation of action potential duration (APD) and altered calcium (Ca2+) handling in ventricular myocytes are commonly observed in heart failure (HF). This study describes a mathematical model of human HF, using a modified version of the Grandi et al. formulation for human ventricular action potential, which includes the late Na+ current (INaL). A sensitivity analysis is performed to investigate how the reported variability in HF remodeling might modulate the main electrophysiological (EP) characteristics in HF. Our simulations reproduced experimental observations in failing myocytes and the APD90 was increased in 24% in HF versus normal ones, diastolic [Ca2+]i was slightly increased, whereas peak systolic [Ca2+]i was reduced to 41% of its normal value. From the sensitivity analysis it could be extracted that APD is particularly sensitive to INaL and INaK. The most impactful parameters on Ca2+ handling are the SERCA function, INaL, INaK, Ileak, ICa, b and INCX. [ABSTRACT FROM PUBLISHER]

Published
2011

11. Simulations of Ge based optically controlled field effect transistors

Author

Vito Sorianello, Lorenzo Colace, A. De Iacovo, Saravanan Rajamani, S. Rajamani, V. Sorianello, A. De Iacovo, L. Colace, Rajamani, S, Sorianello, V, De Iacovo, A, and Colace, Lorenzo

Subjects
Materials science, business.industry, phototransistors, Doping, chemistry.chemical_element, Photodetector, Germanium, Optics, chemistry, Optical transistor, Logic gate, MOSFET, Inverter, Optoelectronics, Field-effect transistor, photodetector, optically controlled transistor, business
Abstract

We report on the simulation of Optically Controlled Field Effect Transistors (OCFET) based on a MOSFET with a Germanium gate. We study the static and dynamic characteristics of the device under near infrared light at 1.55 μm and investigate its operation as a digital inverter.

Published
2014
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