1. Ballistic Mobility Model for QDD Simulation of Ultra-short Transistors
- Author
-
Paulina Aguirre and Andreas Schenk
- Subjects
010302 applied physics ,Physics ,Mobility model ,Density gradient ,business.industry ,Transistor ,Electronic packaging ,02 engineering and technology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,01 natural sciences ,law.invention ,law ,0103 physical sciences ,Optoelectronics ,Field-effect transistor ,0210 nano-technology ,business ,Quantum ,Quantum tunnelling - Abstract
A local TCAD model of the ballistic mobility is proposed that can be used in quantum drift-diffusion (QDD) simulations. It can be combined with models for density gradient correction and source-to-drain tunneling (STDT). These quantum effects strongly affect the transfer characteristics of In 0.53 Ga 0.47 As double-gate ultra-thin-body (DG UTB) FETs with ultra-short channels.
- Published
- 2018
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