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Aiming at the problem that the positioning accuracy of the KCF tracking algorithm is difficult to reach the pixel level and cannot adapt to the target scale variation well, the correlation filter tracking algorithm based on the scale pyramid achieves higher tracking accuracy, but the tracking speed is greatly reduced. Introducing the logarithmic polar coordinate transformation of the image, an object tracking algorithm based on the logarithmic polar coordinate transformation is proposed. First, the target template is transformed into the logarithmic polar coordinate, and the scale variation of the target is converted into a displacement signal, then extract the HOG features before and after the target template transformation, and the filter model of displacement and scale is established. Finally, the displacement and scale factor of the object are tracked synchronously under the framework of correlation filtering, and the two are merged to obtain the target tracking frame. The experimental results show that: The average overlap precision of the algorithm in this paper is high, and the tracking effect is better (Experiment 1). The algorithm in this paper can track rigid objects stably and can adapt to scale variation accurately very well (Experiment 2). The overall accuracy and success rate are in the first place (Experiment 3). The algorithm in this paper can approximately achieve pixel-level positioning accuracy, and the tracking speed can reach twice the traditional algorithm (Experiment 4).

A ultra-high temperature diffusion process with thin oxide layer capped with polysilicon film to get a deep VLD (Variable Lateral Doping) junction edge termination of 4500V trench-gated IGBT platform is presented in this paper. Conventionally, the VLD high temperature drive-in process is performed with oxide cap layer only, during which severe segregation of boron occurs at Si/Oxide interface, resulting in most of the implanted boron ions loss from silicon to oxide. Subsequently, the effective dose of VLD is decreased significantly with a poor controllability. As the consequence, it is difficult to get a uniform distribution of breakdown characteristics of the edge termination. Thru the proposed process disclosed in this paper, the segregation of boron at Polysilicon/Oxide interface acts as an effective barrier for the boron diffusion in underlying layers and the boron loss from silicon is considerably reduced. Both simulated and experimental results confirm that the improved process is highly manufacturable and can achieve excellent breakdown characteristics with a high production yield.