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Displacement damage reduces ion beam induced charge (IBIC) through Shockley–Read–Hall recombination. Closely spaced pulses of \200 keV\ \Si^ + + ions focused in a 40 nm beam spot are used to create damage cascades within \0.25 \mu\m^2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of \200 \keV\ \Si^ + + ions and \60 keV\ \Li^+ ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions. [ABSTRACT FROM PUBLISHER]

The locations of conductive regions in TaOx memristors are spatially mapped using a microbeam and Nanoimplanter by rastering an ion beam across each device while monitoring its resistance. Microbeam irradiation with 800 keV Si ions revealed multiple sensitive regions along the edges of the bottom electrode. The rest of the active device area was found to be insensitive to the ion beam. Nanoimplanter irradiation with 200 keV Si ions demonstrated the ability to more accurately map the size of a sensitive area with a beam spot size of 40 nm by 40 nm. Isolated single spot sensitive regions and a larger sensitive region that extends approximately 300 nm were observed. [ABSTRACT FROM PUBLISHER]