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15 results on '"O. J. F."'

9. MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Author

C. Yan, Arnaud Magrez, Adrian M. Ionescu, Anna Krammer, A. Schueler, Nicolo Oliva, O. J. F. Martin, and Emanuele A. Casu

Subjects
010302 applied physics, Materials science, business.industry, Transistor, Doping, Schottky diode, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Subthreshold slope, Photodiode, law.invention, law, 0103 physical sciences, Optoelectronics, Field-effect transistor, Power MOSFET, 0210 nano-technology, business
Abstract

In this work we report a new class of ultra-thin film devices based on n-n van der Waals (vdW) heteroj unctions of MoS 2 and VO 2 , which show remarkable tunable characteristics. The favorable band alignment combined with the sharp and clean vdW interface determines a tunable diode-like characteristic with a rectification ratio larger than 103. Moreover, the heterojunction can be turned into a Schottky rectifier with higher on-current by triggering the VO2 insulator to metal transition (IMT), by either applying a sufficiently large voltage or increasing the temperature above 68 °C. The proposed devices are photosensitive with linear photoresponse and temperature tunable photoresponsivity values larger than 1 in the 500/650 nm wavelength range. We finally report the first ever field-effect transistor based on gated MoS 2 /VO 2 heterojunctions, which is a true low power FET exploiting a phase change material where the electrostatic doping effect of the gate on the junction results in a subthreshold slope (SS) of 130 mV/dec at room temperature, I ON /I OFF > 103 and I oFF < 5 pA/μm at Vd = 1.5V.

Published
2017
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14. Minimizing quenching of plasmonic sensors caused by adhesion layers.

Author

Siegfried, T., Ekinci, Y., Solak, H., Martin, O. J. F., and Sigg, H.

Abstract

Adhesion layers necessary for the robustness of plasmonic sensors are commonly used at dimensions where the electric near-field intensity can be strongly quenched. We have found that by minimizing the layer thickness to roughly 0.5 nm and by additionally controlling the geometric design of the layer, quenching can by reduced by a factor of up to 7. [ABSTRACT FROM PUBLISHER]

Published
2012

15. Large area periodic nanogap arrays for Raman and fluorescence enhancement: Modeling and performance.

Author

Siegfried, T., Ekinci, Y., Solak, H., Martin, O. J. F., and Sigg, H.

Abstract

We will discuss the use of dense periodic nanogap arrays for plasmonic sensing applications. A high-throughput fabrication process will be presented, that yields nanogap arrays with periodicities above 150 nm, and with accurately controlled gap widths of ±1.5 nm over mm2 large areas. [ABSTRACT FROM PUBLISHER]

Published
2012

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