Author: "Nohira, Hiroshi" / Publisher: ieee - Searchworks@Jio Institute Digital Library Search Results

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Author: Miyata, Noriyuki, primary, Nara, Jun, additional, Yamasaki, Takahiro, additional, Sumita, Kyoko, additional, Sano, Ryousuke, additional, and Nohira, Hiroshi, additional
Published: 2018
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Author: Tsutsui, Kazuo, primary, Tanaka, Masaoki, additional, Hoshino, Norifumi, additional, Nohira, Hiroshi, additional, Kakushima, Kuniyuki, additional, Ahmet, Parhat, additional, Sasaki, Yuichiro, additional, Mizuno, Bunji, additional, Muro, Takayuki, additional, Kinoshita, Toyohiko, additional, Hattori, Takeo, additional, and Iwai, Hiroshi, additional
Published: 2010
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Author: Tsutsui, Kazuo, primary, Hoshino, Norifumi, additional, Nakagawa, Yasumasa, additional, Tanaka, Masaoki, additional, Nohira, Hiroshi, additional, Kakushima, Kuniyuki, additional, Ahemt, Parhat, additional, Sasaki, Yuichiro, additional, Mizuno, Bunji, additional, Hattori, Takeo, additional, and Iwai, Hiroshi, additional
Published: 2010
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Author: Miyata, Youhei, Kanehara, Jun, Nohira, Hiroshi, Izumi, Yudai, Muro, Takayuki, Kinoshita, Toyohiko, Ahmet, Parhat, Kakushima, Kuniyuki, Tsutsui, Kazuo, Hattori, Takeo, and Iwai, Hiroshi
Abstract: 2D distribution of depth profiling of impurities and their activity/non-activity are very important for development of process technology for nano-scale 3D devices. Si Fin structures doped with Boron (B) were evaluated by soft X-ray photoelectron spectroscopy (SXPES) and a feasibility of detecting the difference were demonstrated between the chemical bonding states as well as concentrations of B on top of Fins and those on sidewall of Fins. [ABSTRACT FROM PUBLISHER]
Published: 2012
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