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This work demonstrates a p-MOSFET with a GaNM.l 0.2 Ga 0.8 N (20 nm)/GaN heterostructure grown by metal-organic-chemical vapor deposition (MOCVD) on 6-inch Si substrate with optimized self-aligned process. Devices with source-to-drain distance, L SD , varying from 1 µm down to 200 nm were fabricated. Significant field-induced acceptor ionization was found in these devices at high drain voltages. The device with L SD =200 nm shows a record combination of I ON of ~45 mA/mm and ON-OFF ratio of ~104 when compared with other p-channel transistor demonstrations. The device also exhibits Enhancement-mode operation with threshold voltage of -0.5V. The best device shows an ON-current of 100 mA/mm but at the expense of lower on-off ratio of ~102.

© 2019 IEEE. In this work, we demonstrate a self-aligned p-FET with a GaN/Al0 2Ga0 8N (20 nm)/GaN heterostructure grown by metal-organic-chemical vapor deposition (MOCVD) on Si substrate. Our 100 nm channel length device with recess depth of 70 nm exhibits a record ON-resistance of 400 Ωmm and ON-current over 5 mA/mm with ON-OFF ratio of 6×105 when compared with other p-FET demonstrations based on GaN/AlGaN heterostructure. The device shows E-mode operation with a threshold voltage of -1 V, making it a promising candidate for GaN-based complementary circuit that can be integrated on a Silicon platform. A monolithically integrated n-channel transistor with p-GaN gate is also demonstrated. The potential of the reported p-FET for complementary logic application is evaluated through industry-standard compact modeling and inverter circuit simulation.

Electrodes with nano-scale gaps have been fabricated using metallic nano-wires, derived via milling of thin films with focused ion beam (FIB) and passing current ~1012A/m2. Their I-V characteristics measured at a pressure ~10−6 mbar are shown to follow Child-Langmuir law or Fowler-Nordheim field emission depending upon the gap.