5 results on '"Nagase I"'
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2. Recessed gate GaN-based MIS-HEMTs with Al2O3 gate dielectric deposited by mist-CVD method
3. Electrical properties of GaN-based MIS-HEMTs with Al2O3 gate insulator deposited by ALD and mist-CVD techniques
4. Fabrication and Characterization of ZrO2/AlGaN/GaN MIS-HEMTs with regrown AlGaN Layer
5. A complete single-chip GPS receiver with 1.6-V 24-mW radio in 0.18-μm CMOS.
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