31 results on '"Moehrle M"'
Search Results
2. On the Tunability of Mode Locked Laser Diodes for Use as Local Oscillators in Photonic Terahertz Systems
3. Ultra-Wide Band Tunable Lasers on the PolyBoard Polymer-Waveguide Based Photonic Integration Platform
4. New Polarization Multiplexed Externally Modulated Laser PIC
5. 112 Gb/s PDM-PAM4 Generation and 80 km Transmission Using a Novel Monolithically Integrated Dual-Polarization Electro-Absorption Modulator InP PIC
6. Four-Channel 784 Gbit/s Transmitter Module Enabled by Photonic Wire Bonding and Silicon-Organic Hybrid Modulators
7. Flip-Chip Integration of InP and SiN.
8. 155nm-span multi-wavelength DFB laser array fabricated by selective area growth
9. Highly fabrication tolerant polarization converter for generic photonic integration technology
10. A Four-Channel Silicon Photonic Carrier with Flip-Chip Integrated Semiconductor Optical Amplifier (SOA) Array Providing >10-dB Gain
11. Development of a versatile InP-based photonic platform based on Butt-Joint integration
12. 100-Channel WDM Rx-type PIC on InP for use of low-cost and low power consumption electronics
13. Optical crosstalk on Rx/Tx photonic integration platform
14. 1480nm InGaAsP LOC broad-area laser diodes
15. Transmitter PIC for THz applications based on generic integration technology
16. Performance analysis of an OFDM transmission system with directly modulated lasers for wireless backhauling
17. Lateral far-field of multiple-stripe high power 1480nm broad-area-lasers for pulsed operation
18. 1490 nm surface emitting DFB laser diodes operated by VCSEL driver ICs
19. Polymer hybrid integrated devices for WDM-PON
20. Ultra-low threshold 1490 nm surface-emitting BH-DFB laser diode with integrated monitor photodiode
21. Improved optical confinement in 1.55 μm InAs/GaInAsP quantum dot lasers grown by MOVPE
22. Improved Emission Wavelength Reproducibiliy of InP-Based All Movpe Grown 1.55 μm Quantum Dot Lasers
23. Hybrid photonic integration of InP-based laser diodes and polymer PLCs.
24. Low-cost 25Gb/s 1300nm electroabsorption-modulated InGaAlAs RW-DFB-laser.
25. Ultra-low threshold 1490 nm surface-emitting BH-DFB laser diode with integrated monitor photodiode.
26. Hydrogen passivation in InP:Zn resulting from reactive ion etching during laser stripe formation.
27. Threshold-current-analysis of InGaAs/InGaAsP multi-quantum-well-separate- confinement-lasers
28. Multi-chip integration of lasers and silicon photonics by photonic wire bonding.
29. Hydrogen passivation in InP:Zn resulting from reactive ion etching during laser stripe formation
30. First complex coupled 1490nm CSDFB lasers: High yield, low feedback sensitivity, and uncooled 10Gb/s modulation.
31. Tapered index-coupled 1.55μm InGaAsP/InP-BH-DFB-laser with chirped-period gratings.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.