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The American Cancer Society (ACS) recommends women aged 40 and above to have a mammogram every year and calls it a gold standard for breast cancer detection. Early detection of breast cancer can improve survival rates to a great extent. Inter-observer and intra-observer errors occur frequently in analysis of medical images, given the high variability between interpretations of different radiologists. Also, the sensitivity of mammographic screening varies with image quality and expertise of the radiologist. So, there is no golden standard for the screening process. To offset this variability and to standardize the diagnostic procedures, efforts are being made to develop automated techniques for diagnosis and grading of breast cancer images. A few papers have documented the general trend of computer-aided diagnosis of breast cancer, making a broad study of the several techniques involved. But, there is no definitive documentation focusing on the mathematical techniques used in breast cancer detection. This review aims at providing an overview about recent advances and developments in the field of Computer-Aided Diagnosis (CAD) of breast cancer using mammograms, specifically focusing on the mathematical aspects of the same, aiming to act as a mathematical primer for intermediates and experts in the field. [ABSTRACT FROM PUBLISHER]

In this paper, a Si3N4/ZrO2 split charge trapping layer (SCTL) is proposed for multibit-cell Flash memory. T complementary potential wells of Si3N4/ZrO2 storage nodes en able independent node control when the Fowler-Nordheim (F-N) method is applied for programming/erasing (P/E). Experiment and simulation results suggest that the 2-bit (2-b) charge storage is accomplished by physical data node separation for the SCTL rather than charge injection control. The well-confined charge storages suppress the second-bit effect, enabling excellent 2-b data clearance for short-channel SCTL devices. It was found that the remaining memory windows after 1010 s decrease, dependent on the difference of the trap properties between Si3N4 and ZrO2. [ABSTRACT FROM AUTHOR]