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1. Demonstration of Low-Knee Voltage High-Breakdown GaInP Double HBTs Using Novel Compound Collector Design.

Author

Zampardi, Peter J., Chang, C. E., Fitzsimmons, S., Pierson, R. L., McDermott, B. T., Chen, P. F., and Asbeck, Peter

Subjects
BIPOLAR transistors, TRANSISTORS
Abstract

Presents a study which demonstrated a heterojunction bipolar transistor using a novel compound collector design that allows a low-knee voltage and high-breakdown voltage to be obtained simultaneously. Advantages of double-heterojunction bipolar transistors; Methodology; Results.

Published
2002
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