1. Schottky junction properties of graphene with nitrogen and gallium polar freestanding GaN
- Author
-
Masaki Tanemura, Golap Kalita, Pradeep Desai, Ajinkya K. Ranade, and Rakesh D. Mahyavanshi
- Subjects
010302 applied physics ,Materials science ,Graphene ,business.industry ,Schottky barrier ,chemistry.chemical_element ,Heterojunction ,Gallium nitride ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Epitaxy ,01 natural sciences ,law.invention ,chemistry.chemical_compound ,Semiconductor ,chemistry ,law ,0103 physical sciences ,Optoelectronics ,Direct and indirect band gaps ,Gallium ,0210 nano-technology ,business - Abstract
Integration of two-dimensional (2D) layered materials like graphene with conventional semiconductors is of great interest to develop high performance optoelectronics and other electronic devices. Gallium nitride (GaN) with a direct bandgap (~3.4 eV) has been widely explored for optoelectronic and power device applications. Recently, freestanding GaN has been grown by liquid phase epitaxy. GaN device properties can be significantly changed depending on the nitrogen (N) and gallium (Ga) polar surface. In the present work, we have explored the Schottky junction properties of graphene with N and Ga polar freestanding GaN. Interestingly, Ga-polar graphene/GaN heterostructure showed higher photoresponsivity than the N-polar graphene/GaN heterostructure.
- Published
- 2019
- Full Text
- View/download PDF