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Your search keyword '"Maiti, T. K."' showing total 34 results
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34 results on '"Maiti, T. K."'

9. MOSFET optimization toward power efficient circuit design

Author

Mukhopadhyay, A., primary, Bhattacharya, S., additional, Iizuka, T., additional, Maiti, T. K., additional, Miura-Mattausch, M., additional, Gau, A., additional, Navarro, D., additional, Rahaman, H., additional, Sengupta, A., additional, Yoshitomi, S., additional, and Mattausch, H. J., additional

Published
2018
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19. Physically Based Compact Mobility Model for Organic Thin-Film Transistor.

Author

Maiti, T. K., Chen, L., Zenitani, H., Miyamoto, H., Miura-Mattausch, M., and Mattausch, H. J.

Subjects
*THIN film transistors, *CHARGE carrier mobility, *ORGANIC thin films, *CHARGE transfer, *LOGIC circuits
Abstract

A physically based compact mobility model for organic thin-film transistors (OTFTs) with an analysis of bias-dependent Fermi-energy ( EF ) movement in the bandgap ( Eg ) is presented. Mobility in the localized and extended energy states predicts the drain-current behavior in the weak and strong accumulation operations of OTFTs, respectively. A hopping mobility model as a function of the surface potential is developed to describe the carrier transport through localized energy states located inside Eg . The Poole–Frenkel parallel-field-effect mobility and vertical-field-effect mobility are considered to interpret the bandlike carrier transport in the extended energy states. The parallel field effect on mobility is more pronounced for shorter channel length OTFTs and is considered by developing a channel-length-dependent mobility model. The vertical field effect on mobility is included to account for the effect of mobility on carrier transport at high gate-voltage-induced fields. We also compared the model results with 2-D device simulations and measurements to verify the developed mobility model. [ABSTRACT FROM AUTHOR]

Published
2016
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26. DIBL in short-channel strained-Si n-MOSFET

Author

Mahato, S. S., primary, Chakraborty, P., additional, Maiti, T. K., additional, Bera, M. K., additional, Mahata, C., additional, Sengupta, M., additional, Chakraborty, A., additional, Sarkar, S. K., additional, and Maiti, C. K., additional

Published
2008
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34. A Surface Potential Based Organic Thin-Film Transistor Model for Circuit Simulation Verified With DNTT High Performance Test Devices.

Author

Maiti, T. K., Hayashi, T., Chen, L., Mori, H., Kang, M. J., Takimiya, K., Miura-Mattausch, M., and Mattausch, H. J.

Subjects
*SURFACE potential, *ORGANIC thin films, *THIN film transistors, *ELECTRIC circuits, *COMPUTER simulation, *BAND gaps, *MATHEMATICAL models
Abstract

A compact surface potential based model for organic thin-film transistors (OTFTs), including both tail and deep trap states across the band gap, is reported. The model has been developed on the basis of a complete surface potential approach for undoped-body OTFTs. Accurate surface potentials are calculated by explicitly including the floating backside potential that varies with applied biases. A pseudo-2D resistor model is developed to capture the structural features of the OTFT. The resistor model considers, in particular, the effects originating from a bias dependent 2D current flow in the channel region and results in accurate reproduction of the electrical characteristics. The fitting capability of the developed OTFT model is verified against measured high-performance dinaphtho thieno thiophene (DNTT) based field-effect transistor data. Accurate reproduction of the current characteristics of the OTFT test structures is verified from a week to a strong inversion regime. [ABSTRACT FROM PUBLISHER]

Published
2014
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