Search

Your search keyword '"M. Le Brun"' showing total 2 results
Start Over Author "M. Le Brun" Publisher ieee
2 results on '"M. Le Brun"'

1. Full Noise Characterization of Micromave Devices. Application to GaAlAs/GaAs TEGFET

Author

L. Chusseau, B. Carnez, Christian Rumelhard, and M. Le Brun

Subjects
Physics, Noise measurement, business.industry, Gate length, Y-factor, Noise figure, Noise characterization, Gallium arsenide, chemistry.chemical_compound, chemistry, Electronic engineering, Optoelectronics, business, Microwave
Abstract

A new method for the full noise characterization of microwave devices is proposed. It takes into account various kinds of measurement uncertainties, and is able to process results from an automatic noise measurement set up. The full noise characterization of a 140?m gatewidth and 0.5?m gate length TEGFET in the 2-18 GHz band is given as an exemple.

Published
1986
Full Text
View/download PDF

2. GaAs Fully Monolithic X Band SPDT Switch with Integrated TTL Compatible Driver

Author

M. Gavant, S. Ruggeri, C. Versnaeyen, and M. Le Brun

Subjects
Engineering, business.industry, X band, Electrical engineering, Response time, Gallium arsenide, chemistry.chemical_compound, chemistry, Insertion loss, Radio frequency, business, Electrical impedance, Electronic circuit, Voltage
Abstract

This paper describes the performance of a GaAs monolithic X-Band SPDT switch with integrated BFL driver TTL compatible. A single TTL command voltage is needed to switch the RF signal from one channel to the other. From 8 to 12 GHz, the insertion loss is less than 1.6 dB and the isolation of the disconnected channel greater than 21 dB. The response time of the switch, which was not optimized in the design, was found to be 2 ns. To our knowledge this is the first fully monolithic mixed microwave and digital SPDT switch to be published.

Published
1988
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results