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The breakdown voltage (BVDS) of uniform doping (UD) and linear variable doping (LVD) silicon-on-insulator (SOI) p-channel laterally diffused metal oxide semiconductor field effect transistors (p-LDMOSFETs) is examined after exposure to the total ionizing dose (TID). The results show BVDS degradation with accumulated dose. TID degradation with the MOS device biased off is more severe than that with the MOS device biased on. Also, LVD BVDS is more significant than UD BVDS at a given TID. Technology computer-aided design (TCAD) simulation is used to gain an insight into the mechanism causing BVDS degradation. [ABSTRACT FROM AUTHOR]

The electrical characteristics of silicon-on-insulator (SOI) n-channel laterally diffused metal oxide semiconductor field effect transistors (NLDMOSFETs) are examined after exposure to the total ionizing dose (TID). The devices are partially radiation hardened in that the gate oxide (GOX) and the field oxide (FOX) have undergone a hardening process, but not the buried oxide (BOX). Two bias conditions, OFF-state and all terminals grounded, during irradiation are examined. The irradiated device shows that the OFF-state leakage current (IL) of these devices increases with the accumulated dose. The physical mechanisms for the IL are analyzed by technology computer-aided design (TCAD) simulation. The OFF-state leakage current (IL) can be explained due to the effects of radiation-induced trapped charge at the BOX silicon interface. [ABSTRACT FROM AUTHOR]

This brief first time presents single-event burnout (SEB) simulation results for conventional AlGaN/ GaN gate field plate MISFET (GFP-C MISFET), simultaneously, a hardened MISFET with electrode connected doped plugs in the buffer (EC-DP MISFET) is proposed for the first time. The SEB triggering mechanisms contain the back-channel effect and following impact ionization dominated by electron in the high field region. By comparing the simulation results from the GFP-C MISFET and proposed hardened EC-DP MISFET, the carriers induced by heavy ion can be quickly absorbed to drain and source electrode through EC-DP, so that the proposed EC-DP MISFET can achieve better SEB performance than conventional one. With a heavy ion having the linear energy transfer value of 0.6-pC/ $\mu \text{m}$ striking vertically, SEB threshold voltage obtained in GFP-C MISFET and hardened EC-DP MISFET is 280 and 338 V, respectively. [ABSTRACT FROM AUTHOR]

This paper presents the 2-D numerical simulation results of single-event burnout (SEB) in 4H-SiC junction barrier Schottky (JBS) diode by low carrier lifetime control (LCLC) for the first time. We investigate the SEB performance based on an 1800-V JBS structure and find that the most sensitive ion’s strike position is the middle of junction spacing because of the punchthrough of the electric field at anode contact. Then, the SEB hardening mechanism of LCLC is studied in this paper that the double-sided peak electric field can be effectively improved which results in a significantly decrease of maximal temperature. For the incident particle with different linear energy transfer values, we find that the SEB threshold voltage can be substantially enhanced when the carrier lifetime ($\tau $) is under a certain value. In addition, the basic characteristics with LCLC are discussed that the forward and reversed characteristics are hardly affected. [ABSTRACT FROM AUTHOR]