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Your search keyword '"Lin, M-C."' showing total 98 results
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98 results on '"Lin, M-C."'

1. Smart GaN platform: Performance & challenges

Author

Tsai, Chun-Lin, primary, Wang, Yun-Hsiang, additional, Kwan, M.-H., additional, Chen, P.-C., additional, Yao, F.-W., additional, Liu, S.-C., additional, Yu, J.-L., additional, Yeh, C.-L., additional, Su, R.-Y., additional, Wang, W., additional, Yang, W.-C., additional, Wong, K.-Y., additional, Lin, Y.-S., additional, Lin, M.-C., additional, Wu, H.-Y., additional, Chen, C.-M., additional, Yu, C.-Y., additional, Wu, C.-B., additional, Chang, M.-H., additional, You, J.-S., additional, Huang, T.-M., additional, Wang, S.-P., additional, Tsai, L. Y., additional, Chern, Chan-Hong, additional, Tuan, H. C., additional, and Kalnitsky, Alex, additional

Published
2017
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14. A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems

Author

Wong, K.-Y. Roy, primary, Kwan, M.-H., additional, Yao, F.-W., additional, Tsai, M.-W., additional, Lin, Y.-S., additional, Chang, Y.-C., additional, Chen, P.-C., additional, Su, R.-Y., additional, Yu, J.-L., additional, Yang, F.-J., additional, Lansbergen, G. P., additional, Hsiung, C.-W., additional, Lai, Y.-A., additional, Chiu, K.-L., additional, Chen, C.F., additional, Lin, M.-C., additional, Wu, H.-Y., additional, Chiang, C.-H., additional, Liu, S.-D., additional, Chiu, H.-C., additional, Liu, P.-C., additional, Chen, C.-M., additional, Yu, C.-Y., additional, Tsai, C.-S., additional, Wu, C.-B., additional, Lin, B., additional, Chang, M.-H., additional, You, J.-S., additional, Wang, S.-P., additional, Chen, L.-C., additional, Liao, Y.-Y., additional, Tsai, L.Y., additional, Tsai, Tom, additional, Tuan, H.C., additional, and Kalnitsky, Alex, additional

Published
2015
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16. AlGaN/GaN MIS-HFET with improvement in high temperature gate bias stress-induced reliability

Author

Wong, King-Yuen, primary, Lin, Y. S., additional, Hsiung, C. W., additional, Lansbergen, G. P., additional, Lin, M. C., additional, Yao, F. W., additional, Yu, C. J., additional, Chen, P. C., additional, Su, R. Y., additional, Yu, J. L., additional, Liu, P. C., additional, Chen, C. M., additional, Chiang, C. H., additional, Chiu, H. C., additional, Liu, S. D., additional, Lai, Y. A., additional, Yu, C. Y., additional, Yang, F. J., additional, Tsai, C. L., additional, Tsai, C. S., additional, Chen, X., additional, Tuan, H. C., additional, and Kalnitsky, Alex, additional

Published
2014
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24. Hard Magnetic Property Improvement of Sputter-Prepared FePd Films on Glass Substrates by Underlayering With Refractory Nb, Mo, and W Elements.

Author

Chang, H. W., Yuan, F. T., Chen, W. C., Wei, D. H., Lin, M. C., Su, C. C., Wang, C. R., Shih, C. W., Chang, W. C., and Yao, Y. D.

Subjects
MAGNETIC properties of iron-palladium alloys, SPUTTERING (Physics), METALLIC glasses, REFRACTORY materials, MAGNETIC properties of thin films, MAGNETIC anisotropy
Abstract

Magnetic properties and structure of sputter-prepared FePd thin films on the glass substrates by underlayering with refractory elements M (M = Nb, Mo, and W) have been studied. The structural analysis shows that FePd films have a (111) preferred orientation. All studied FePd films exhibit in-plane magnetic anisotropy. For single-layer FePd films, the coercivity ( Hc) and magnetic energy product [(BH) \mathrm {max}] are increased with annealing temperature ( Ta) and reached the maximum value of 1.3 kOe and 3.8 MGOe in the sample annealing at 600 °C. With the further increase of Ta , magnetic properties drop rapidly. Dependence of magnetic hardening on Ta can be explained by dominant solid reactions in different region of Ta including ordering and grain growth. Interestingly, magnetic properties of L10-FePd are largely improved by underlayering with 5 nm-thick Nb, Mo, and W layers. Both the coercivity and energy product are significantly increased to 1.6 kOe and 4.9 MGOe for M = Nb, 2.5 kOe and 6.4 MGOe for M = Mo, and 3.3 kOe and 8.7 MGOe for M = W, respectively. Structural analysis suggests that this magnetic enhancement is related to both higher ordering degree and refined microstructure. [ABSTRACT FROM AUTHOR]

Published
2015
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49. Magnetic Property Enhancement of FePt Films by Zr Underlayering.

Author

Shen, C. Y., Chang, H. W., Yuan, F. T., Lin, M. C., Su, C. C., Wang, C. R., Mei, J. K., Chen, C. C., and Chang, W. C.

Subjects
MAGNETIC properties of metals, IRON alloys, ZIRCONIUM, THIN films, CRYSTAL structure, ANNEALING of metals, NUCLEATION, GRAIN size
Abstract

Structure and magnetic properties of the sputter-prepared FePt (160 nm) and FePt(160 nm)/Zr(10 nm) are studied. The films were deposited at room temperature and followed by a post annealing for magnetic hardening by L10-ordering. Distinct ordering processes are observed. In FePt films, extensive ordering occurs after annealing at Ta=700\ ^\circ\C and forms strong (111) texture. Hc increases to 8.5 kOe with a decrease in Mr of about 10%. In contrast, FePt/Zr samples orders at Ta=500\ ^\circ\C and results in drastic increase in Hc reaching 12.5 kOe with only 2.7% decrease in Mr. The difference in surface morphology of the two samples suggests that the low temperature ordering is a result of the nucleation promotion by Zr underlayer. The refined grain size strengthens the intergrain coupling resulting in greatly enhanced magnetic properties. The value of (BH)\max for the film with Ta=500, 600, and 700 ^\circ\C are 16.8, 20.0, and 19.6 MGOe, respectively. The maximum value is more than 110% higher than that of the FePt film annealed at Ta=700\ ^\circ\C (9.5 MGOe). [ABSTRACT FROM PUBLISHER]

Published
2014
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50. Elastoplastic Buckling on the Bent Waveguide of CESR-Type SRF Cavity.

Author

Lin, M. C., Wang, Ch., Yang, T. T., Tsai, M. H., Chang, L. H., Luo, G. H., Yeh, M. S., and Chung, F. T.

Subjects
*SUPERCONDUCTORS, *RADIO frequency, *HELIUM, *WAVEGUIDES, *VACUUM, *FINITE element method, *NIOBIUM, *LIQUIDS, *ELASTOPLASTICITY
Abstract

A superconducting radio-frequency (SRF) cavity module of CESR-type has been adopted for some advanced accelerators. During operation, the pressure in the liquid-helium vessel acts on the cavity wall, but an ultrahigh vacuum must prevail inside the cavity; the cavity structure must be thus pressure-tested at ambient temperature as a standard procedure for safety. During the pressure test elastoplastic buckling might occur on this SRF cavity and its bent waveguide section, being a shell-like structure. A nonlinear finite-element model for computation is established to assess the mechanism of buckling and post-buckling of the bent waveguide. Some test results with copper bent waveguides are presented. The critical pressure and buckling pattern are strongly affected by the material property and the thickness of the structure and the U-channel. [ABSTRACT FROM AUTHOR]

Published
2007
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