23 results on '"Lee, J G"'
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2. 14nm FinFET Device Boost via 2nd Generation Fins Optimized for High Performance CMOS Applications
3. Multiple Workfunction High Performance FinFETs for Ultra-low Voltage Operation
4. Quantitative model of CMOS inverter chain ring oscillator's effective capacitance and its improvements in 14nm FinFET technology
5. Impact of aggressive fin width scaling on FinFET device characteristics
6. 14nm FinFET technology SRAM cell margin evaluation and analysis by local layout effect
7. Electrical Resistivity and Magnetic Performance of Ceramics-Bonded Nd-Fe-B-Type Magnet Consolidated Using Dielectric Oxide Binder.
8. Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation
9. 1.5×10−9 Ωcm2 Contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation
10. Coercivity and Phase Evolution in Mechanically Milled (FeCo)2B-Type Hard Magnetic Alloy.
11. 14-nm FinFET Technology for Analog and RF Applications.
12. Improvement of Magnetic Performance of Nd–Fe–B-Type Die-Upset Magnet by RF3-Doping.
13. Comprehensive extensibility of 20nm low power/high performance technology platform featuring scalable high-k/metal gate planar transistors with reduced design corner
14. Optical manipulation of micro-particles with Laguerre-Gaussian mode beam
15. Switch Controlled Source Amplifier for Low Power Mobile TFT-LCD Driver IC
16. Effect of Rare-Earth Dopant on Coercivity of Hot-Pressed Nd–Fe–B Magnet Doped With RF3.
17. Implications of Rent's Rule for NoC Design and Its Fault-Tolerance.
18. Coercivity of Nd-Fe-B-Type Fine Particles Prepared by Mechanical Milling of HDDR Material.
19. Platinum Etching in an Inductively Coupled Plasma.
20. Development of nanocomposite lead-free electronic solders
21. A 0.15 μm DRAM technology node for 4 Gb DRAM
22. 1.5?10?9 ?cm2 Contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation.
23. A 0.15 /spl mu/m DRAM technology node for 4 Gb DRAM.
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