1. A 130nm 1Mb HfOx embedded RRAM macro using self-adaptive peripheral circuit system techniques for 1.6X work temperature range
- Author
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Meng-Fan Chang, Yun Li, Cong Fang, Jinshun Bi, Lan Dai, Chengying Chen, Dongyu Fan, Feng Zhang, Xiaowei Han, Ming Liu, Yuan Duan, and Jin Li
- Subjects
010302 applied physics ,Computer science ,Word error rate ,Working temperature ,Self adaptive ,Atmospheric temperature range ,01 natural sciences ,Temperature measurement ,Resistive random-access memory ,Robustness (computer science) ,0103 physical sciences ,Electronic engineering ,Macro ,010306 general physics - Abstract
This paper designed a 1-Mb HfOx-based embedded Resistive Random Access Memory (RRAM) device with a one-transistor-one-resistor (1T1R) structure, and systematically investigated its working temperature range. It noted that this embedded RRAM macro has a 1.6X working temperature range than previous design for some extreme environment. Using the peripheral-assisted technique, it can enable the error rate of the RRAM macro under 0.5% which can reduce the complexity of ECC function. Experimental results show that, the RRAM macro achieves a wider work temperature range (between −55°C and 150°C), which improves the reliability of the entire embedded RRAM macro and has a high robustness as well.
- Published
- 2017
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