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2. Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM -

5. Highly productive PCRAM technology platform and full chip operation: Based on 4F2(84nm pitch) cell scheme for 1 Gb and beyond

9. Programming disturbance and cell scaling in phase change memory: For up to 16nm based 4F2 cell

20. Performance Study of the Silicon Strip Detector

21. Thermal stability of MTJ using Zr capping layer

25. A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm DRAMs

41. The breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor(RCAT) for 88 nm feature size and beyond

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