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Your search keyword '"Huang, S.-W."' showing total 38 results
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38 results on '"Huang, S.-W."'

4. Poly-Silicon Trap Position and Pass Voltage Effects on RTN Amplitude in a Vertical NAND Flash Cell String.

Author

Chou, Y. L., Wang, Tahui, Lin, Mercator, Chang, Y. W., Liu, Lenvis, Huang, S. W., Tsai, W. J., Lu, T. C., Chen, K. C., and Lu, Chih-Yuan

Subjects
BURST noise, NAND gates, ELECTRIC potential, ELECTRON density, PERCOLATION
Abstract

We investigate the dependence of random telegraph noise (RTN) on a poly-silicon trap position in a 3D vertical channel and charge-trapping NAND flash cell string. We characterize RTN in read current of each cell of a string at different read and pass voltages. RTN characteristics resulting from a trap in a read cell or in a pass cell are differentiated. A method to identify a poly-silicon trap position in a NAND string is proposed. We perform the 3D TCAD simulation to calculate channel electron density in a string. Measured RTN characteristics can be explained by current-path percolation and channel carrier screening effects. The distribution of RTN amplitudes in NAND strings is characterized. [ABSTRACT FROM PUBLISHER]

Published
2016
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24. Materials development for flexible displays.

Author

Xia, Yu, Tan, Phoebe, Zhao, Wei, Yan, Henry, Boudinet, Damien, Chen, Zhihua, Zheng, Yan, Usta, Hakan, Chen, Mark, Fang, James, Huang, S W, Hsiao, C C, and Facchetti, Antonio

Abstract

In this paper we report on the TFT performance of new organic n-channel semiconductors exhibiting very large carrier mobilities (2–3 cm2/Vs for injket-printed TFTs, >10 cm2/Vs for single crystals), exceptional bias tress and thermal stress stability. Finally, flexible EPDs were fabricated using these materials. [ABSTRACT FROM PUBLISHER]

Published
2012

27. Numerical Analysis of Scattering by Dielectric Random Rough Surfaces Using Modified SMCG Scheme and Curvilinear RWG Basis Functions.

Author

Huang, S. W., Zhang, G. H., Xia, M. Y., and Chan, C. H.

Subjects
*SCATTERING (Mathematics), *NUMERICAL analysis, *GAUSSIAN processes, *ELECTROMAGNETISM, *CHEBYSHEV polynomials, DIELECTRICS spectra
Abstract

An augmented sparse-matrix canonical-grid (SMCG) approach for numerical analysis of scattering by dielectric random rough surfaces is developed. It is an extension of the previous modified SMCG scheme for perfect-electric-conducting (PEC) surfaces to dielectric cases, and is enhanced by adopting curved triangulation modeling. By using the curved modeling with curvilinear Rao-Wilton-Glisson basis functions (CRWG bases), the number of unknowns can be reduced substantially to extract results of the same accuracy, compared with using the planar triangular discretization with planar RWG bases. Numerical results for Gaussian and ocean-like dielectric rough surfaces are provided to confirm the validity and efficacy of the proposed method. [ABSTRACT FROM AUTHOR]

Published
2009
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28. Performance Improvement of a Virtual-Ground Nonvolatile Charge-Trap Storage nor-Type Memory Cell With Optimized Junction Dosage for 45-nm Generation Node.

Author

Ou, T. F., Tzeng, W. C., Tsai, C. H., Lee, G. D., Ku, S. H., Liu, C. H., Liu, K. W., Zous, N. K., Huang, S. W., Chen, M. S., Lu, W. P., Chen, K. C., and Lu, Chih-Yuan

Subjects
COMPUTER storage devices, SEMICONDUCTOR junctions, PERFORMANCE evaluation, ELECTRONIC noise, ELECTRIC currents, FLASH memory, ELECTRON impact ionization, LOGIC circuits
Abstract

A variety of cell performances, such as program speed, second-bit effect, program disturbance along the channel direction (X-disturbance), and random telegraph noise (RTN), are investigated extensively under different junction dosages in a virtual-ground charge-trap nor array of 45-nm technology. Junction profiles and the location of programmed charges are compared by means of a gate-induced drain leakage scheme. Experiments reveal that the source/drain dosage beneath gate edges affects the program speed, injected charge distribution, X-disturbance induced by secondary impact ionization, and RTN performance. [ABSTRACT FROM AUTHOR]

Published
2011
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38. Coherent synthesis of ultra-broadband optical parametric amplifiers.

Author

Manzoni, C., Huang, S. W., Cirmi, G., Moses, J., Kartner, F. X., and Cerullo, G.

Abstract

We report on coherent synthesis of two ultra-broadband optical parametric amplifiers, resulting in octave-spanning (500–1000 nm) spectra supporting nearly single-cycle sub-4-fs pulse duration. Synthesized pulse timing is locked to sub-300-as by a balanced cross-correlator. [ABSTRACT FROM PUBLISHER]

Published
2012

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