1. A micromachined silicon capacitive temperature sensor for radiosonde applications
- Author
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Hong-Yu Ma, Qing-An Huang, Ming Qin, and Tingting Lu
- Subjects
Materials science ,Silicon ,business.industry ,Capacitive sensing ,chemistry.chemical_element ,Silicon on insulator ,Hardware_PERFORMANCEANDRELIABILITY ,Capacitive displacement sensor ,Dissipation ,Atmospheric temperature range ,Surface micromachining ,chemistry ,ComputerSystemsOrganization_MISCELLANEOUS ,Hardware_INTEGRATEDCIRCUITS ,Electronic engineering ,Optoelectronics ,Silicon bandgap temperature sensor ,business - Abstract
A novel silicon capacitive temperature sensor implemented with micromachined multilayer cantilevers is presented. The multi-layered sensor structure has been fabricated with SOI wafers by a 4-mask process. Using this structure, the low-power dissipation and wide temperature range can be achieved. For the present sensor, the temperature range is from โ70°C to 100°C with the sensitivity of 7fF/°C. This makes it suitable to serve as a temperature sensor for low-power and wide temperature range applications.
- Published
- 2009