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1. High Density VR Solutions using Immersion Cooling

Author

Ruelas Flores, Jesus Gilberto, primary, Hernandez, Arturo Sanchez, additional, Padilla Ramirez, Ernesto Antonio, additional, del Rio Gonzalez, Oscar A, additional, Macias, Andres Ramirez, additional, and Mora Flores, Carlos E, additional

Published
2023
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6. Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer

Author

Alian, Alireza, primary, Rodriguez, Raul, additional, Yadav, Sachin, additional, Peralagu, Uthayasankaran, additional, Hernandez, Arturo Sibaja, additional, Putcha, Vamsi, additional, Zhao, Ming, additional, ElKashlan, Rana, additional, Vermeersch, Bjorn, additional, Yu, Hao, additional, Bury, Erik, additional, Khaled, Ahmad, additional, Collaert, Nadine, additional, and Parvais, Bertr, additional

Published
2022
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16. ON/OFF sEMG Switch for FES Activation

Author

Toledo Peral, Cinthya L., primary, Nava, Gerardo Hernandez, additional, Melja Licona, Jose Antonio, additional, Mercado Gutierrez, Jorge Airy, additional, Aguirre Guemez, Ana Valeria, additional, Fresnedo, Jimena Quinzanos, additional, Hernandez, Arturo Vera, additional, Salas, Lorenzo Leija, additional, and Martinez, Josefina Gutierrez, additional

Published
2019
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21. Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration.

Author

Wang, Hongyue, Hsu, Po-Chun, Zhao, Ming, Simoen, Eddy, Sibaja-Hernandez, Arturo, and Wang, Jinyan

Subjects
DOPING agents (Chemistry), OHM'S law, PLASMA sheaths, ELECTRON traps, NITROGEN, ELECTRON capture, POTENTIAL barrier, INDIUM gallium nitride
Abstract

In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) structure was used to investigate the defect characteristics and carrier transport mechanisms in GaN:C layers with different carbon doping concentration. Capacitance-voltage, current–voltage, and deep-level transient spectroscopy measurements were performed at different temperatures. At forward bias, a pinning effect was found at the interface of the GaN:C/GaN:Si layer, due to the defects capturing electrons. The forward currents of the samples with high carbon doping concentration (NC > 1 × 1019 cm−3) increase gradually with increasing forward bias voltage. Ohm’s law, space-charge-limited current, and variable-range-hopping mechanisms may dominate the forward current. For the samples with low carbon doping concentration (NC < 1 × 1019 cm−3), a device turning on behavior was observed, which is attributed to the carriers overcoming a potential barrier. In addition, the DLTS spectra reveal that only electron trapping happens at forward bias for the samples with high carbon doping concentration, while, in addition, hole trapping was observed for the samples with low carbon doping concentration. The process of the carrier capture by defects was demonstrated. [ABSTRACT FROM AUTHOR]

Published
2020
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24. Welcome, bem-vindos, bienvenidos

Author

Nunez, Alexander Arroyo, primary, Valdez, Raquel Martinez, additional, Narvaez, Francisco A. Ramos, additional, Santoyo, Enrique Tadeo, additional, Hernandez, Arturo Vera, additional, Salas, Lorenzo Leija, additional, Leder, Ron, additional, Schwartz, Fabiano Peruzzo, additional, and Bazan-Trujillo, Ivonne, additional

Published
2017
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26. Micro-Coaxial Slot Antenna to Treat Bone Tumors by Thermal Ablation: Theoretical and Experimental Evaluation.

Author

Trujillo Romero, Citlalli J., Rico Martinez, Genaro, Leija Salas, Lorenzo, Vera Hernandez, Arturo, and Gutierrez Martinez, Josefina

Abstract

According to the American Cancer Society the number of patients with bone tumors is growing up. The extremities of the long bones are the most affected by this disease. The common treatments are surgery (amputation), radio and chemotherapy. However, their high cost and side-effects show the necessity of new treatments. These should not only eradicate the tumor but also offer a major control over the treated area. In this sense, the microwave ablation plays an important role. A micro-coaxial slot antenna to generated thermal ablation in bone tumors is proposed. The antenna was modeled, constructed and evaluated in pig tissue. A parametric study to evaluate the effect of the blood perfusion in the thermal distributions was done. Values of bone blood perfusion among 30-1171 ml/min/kg were included in this study. Subsequently, temperature profiles and thermal distributions generated in pig bones were obtained and compared with those obtained in the model. This evaluation shows a high level of concordance; in the best cases, a difference between simulation and measurement of 0.13°C-3.83°C and 0.08°C-0.41°C was found. This study corroborates the efficiency of the models to predict the antenna behavior and the efficiency of the proposed antenna to generated thermal ablation in bone tissue. [ABSTRACT FROM AUTHOR]

Published
2018
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27. Response to electromagnetic hyperthermia of a temperature sensor based on optical fiber

Author

V. Hernandez Arturo, R. Vazquez, R. del Carmen, and L. Salas Lorenzo

Subjects
Optical fiber, Materials science, business.industry, Time constant, Physics::Optics, Optical power, Repeatability, Cladding (fiber optics), Imaging phantom, law.invention, Optics, Fiber optic sensor, law, Optoelectronics, business, Refractive index
Abstract

The development of a sensor of temperature based on optical fiber sensors is presented. The sensor will be used in an experimental hyperthermia laboratory to characterize applicators and temperature distribution in phantoms exposed to controlled electromagnetic radiations. The temperature sensor is built with a glass optical fiber, in which part of their cladding was replaced by an oil. The variation of the oil refractive index with temperature modulates the optical power transmitted along the fiber, then the probe works based on the principle of evanescent field sensors. As advantage, the temperature sensor is not affected by the eIectromagnetic radiations. The measurements have a repeatability error less than 0,5 YO in the range of interest (20°C to 40°C). The sensors have a low thermal time constant (1,9 s), then, the time required to perform a complete mapping in a plane of the phantom is reduced.

Published
2005
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28. Design of an electric field sensor for the direct measurement of SAR

Author

V. Hernandez Arturo, R. Vazquez, L. Salas Lorenzo, and R. del Carmen

Subjects
Dipole, Materials science, business.industry, Transmission line, Detector, Optoelectronics, Specific absorption rate, Schottky diode, business, Biosensor, Electromagnetic radiation, Imaging phantom
Abstract

The development of an electric field sensor is presented. The sensor w N be used in an experimental hyperthermia laboratory to obtain the measurement of SAR (specific absorption rate) in phantoms exposed to controlled electromagnetic radiations, The sensor is built with a Schottky diode as a detector and its terminals act as dipole, carbon fiber is used as transmission line.

Published
2005
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37. SiGe HBTs With Normal High-Speed Emitter-Up and Reverse Low-Power Collector-Up Operation.

Author

Li Jen Choi, Sibaja-Hernandez, Arturo, Venegas, Rafael, Huylenbroeck, Stefaan Van, and Decoutere, Stefaan

Subjects
*BIPOLAR transistors, *BIPOLAR integrated circuits, *INSULATED gate bipolar transistors, *SEMICONDUCTORS, *POWER transistors, *POWER electronics
Abstract

SiGe heterojunction bipolar transistors (HBTs) are usually optimized to obtain best performance in the forward operation mode. In this paper, we demonstrate that a simultaneous excellent performance in the reverse mode of operation can be obtained as well. A fT/fmax combination of 50/100 GHz is obtained, which is, to our knowledge, the best value reported for a Si-based HBT operating in the reverse mode. This excellent performance is analyzed and explained by studying the different delay components of the device in the reverse operation mode. It is shown that the extrinsic SiGe base region plays a crucial role. Additionally, good low-power performance in the reverse operation mode is obtained as well, which is attributed to a reduction in the device parasitic contributions. The simultaneous availability of a high-speed performance in the forward mode and a low-power performance in the reverse mode offers additional flexibility to optimize circuit performance in terms of speed, power, and area. [ABSTRACT FROM AUTHOR]

Published
2008
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39. Superior Reliability of Junctionless pFinFETs by Reduced Oxide Electric Field.

Author

Toledano-Luque, Maria, Matagne, Philippe, Sibaja-Hernandez, Arturo, Chiarella, Thomas, Ragnarsson, Lars-Ake, Soree, Bart, Cho, Moonju, Mocuta, Anda, and Thean, Aaron

Subjects
FIELD-effect transistors, HIGH temperatures, COMPLEMENTARY metal oxide semiconductors, SEMICONDUCTOR industry, RELIABILITY in engineering
Abstract

Superior reliability of junctionless (JL) compared with inversion-mode field-effect transistors (FETs) is experimentally demonstrated on bulk FinFET wafers. The reduced negative bias temperature instability (NBTI) of JL pFETs outperforms the previously reported best NBTI reliability data obtained with Si channel devices and guarantees 10-year lifetime at typical operating voltages and high temperature. This behavior is understood through the reduced oxide electric field and lessened interaction between charge carriers and oxide traps during device operation. These findings encourage the investigation of JL devices with alternative channels as a promising alternative for 7-nm technology nodes meeting reliability targets. [ABSTRACT FROM AUTHOR]

Published
2014
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