11 results on '"Hennessy, W."'
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2. Optimum low-voltage silicon power switches fabricated using scaled trench MOS technologies.
3. A novel high-frequency power FET structure fabricated using LPCVD WSi/sub 2/ gate and LCPVD W source contact technology.
4. P-channel, vertical insulated gate bipolar transistors with collector short.
5. Nitrogen-implanted SiC diodes using high-temperature implantation.
6. Low profile DC-DC power converter for 3-D electronics assembly
7. Optimum low-voltage silicon power switches fabricated using scaled trench MOS technologies
8. A radiation hard pixel design for x-ray imagers.
9. A fully planarized, 6H-SiC UMOS insulated-gate bipolar transistor.
10. Low profile DC-DC power converter for 3-D electronics assembly.
11. A novel trench planarization technique using polysilicon refill, polysilicon oxidation, and oxide etchback.
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