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In this study, N-type amorphous indium zinc oxide thin-film transistors are fabricated and temperature-dependent electrical characteristics in the range of 170–295 K are analyzed through experimental measurements and using an equivalent-circuit model. In this model, thermionic field emission for reverse bias and a thermionic emission mechanism for forward bias are applied. The barrier height coefficient of a contact region between the channel and the Ti/Au electrode is 1.26 meV/K, and the resistance of the channel material decreases at a rate of - 0.39 \Omega \cdot \mathrm K^-1 at various temperatures. The obtained energy level is experimentally confirmed through a Kelvin probe measurement. In addition, the simulation results of the channel resistance successfully describe the Arrhenius behavior of the drain current and the Mott variable-range hopping conduction mechanism in a low-temperature regime below 230 K. [ABSTRACT FROM PUBLISHER]