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Your search keyword '"Giorgi D."' showing total 23 results
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23 results on '"Giorgi D."'

2. A Critical Assessment of 2D and 3D Face Recognition Algorithms

Author

Giorgi, D., primary, Attene, M., additional, Patane, G., additional, Marini, S., additional, Pizzi, C., additional, Biasotti, S., additional, Spagnuolo, M., additional, Falcidieno, B., additional, Corvi, M., additional, Usai, L., additional, Roncarolo, L., additional, and Garibotto, G., additional

Published
2009
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21. 11.72-cm2 Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 MA2 ⋅ s.

Author

Snook, M., Hearne, H., McNutt, T., Veliadis, V., El-Hinnawy, N., Nechay, B., Woodruff, S., Stahlbush, R. E., Howell, R. S., Giorgi, D., White, J., and Davis, S.

Subjects
SILICON carbide, SILICON diodes, HIGH voltages, POWER density, ENERGY dissipation
Abstract

SiC device area is currently limited by material and processing defects. To meet the large current handling requirements of modern power conditioning systems, paralleling of a large number of devices is required. This can increase cost and complexity through dicing, soldering, inclusion of ballast resistors, and forming multiple wire bonds. Furthermore, paralleling numerous discrete devices increases package volume/weight and reduces power density. To overcome these complexities, p-i-n diodes were designed, fabricated at a yield of 83%, and interconnected on a 3-in 4H-SiC wafer to form an 11.72-cm2 active-area full-wafer diode. The full-wafer diode exhibited a breakdown voltage of 1790 V at an extremely low leakage current density of less than 0.002 mA/cm2. At a pulsed current density of 5.5 kA/cm2 and a rise time of di/dt = 1.1 kA/μs, the peak current through the wafer-interconnected diode was 64.3 kA with a forward-voltage drop of 10.3 V. The dissipated energy was 382 J, and the calculated action exceeded 1.7 MA2 · s. Preliminary efforts on high-voltage diode interconnection have produced quarter-wafer-interconnected p-i-n diodes with breakdown voltages of 4 and 4.5 kV and active areas of 3.1 and 2.2 cm2, respectively. [ABSTRACT FROM PUBLISHER]

Published
2012
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23. Combinatorial 3-Manifolds from Sets of Tetrahedra

Author

Attene M., FERRI, MASSIMO, GIORGI, DANIELA, F.-E. WOLTER, A. SOURIN, Attene M., Ferri M., and Giorgi D.

Subjects
MESH, Particle system, Materials science, Continuum mechanics, Bending stiffness, SINGULARITY, Mechanics, Grid, Anisotropy, Haptic force feedback, Simulation, ComputingMethodologies_COMPUTERGRAPHICS
Abstract

We propose an algorithm to convert a tetrahedral mesh with singularities to a combinatorial 3-manifold using only local modifications. We outline sufficient conditions on the mesh to guarantee the feasibility of the approach and we show how singularities can be both identified and removed according to the configuration of their link. Furthermore, we demonstrate that the algorithm can be implemented using a flexible state-of-the-art data structure for manifold tetrahedral meshes suitable for efficient and general applications.

Published
2007
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