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Multiplayer Online Battle Arena (MOBA) games are very popular in the current eSport scenario, being highlighted in several competitions around the world. However, the domain of knowledge contained in these games is large, which makes it difficult to discover and predict the course of a match. The present work proposes the application of classification algorithms to determine the team with more chances to win a match. Two classifications procedures were used, one based on the composition of heroes in each team and another considering the duration of the match. The experiments were performed on data collected from 123,326 matches of Dota 2, showing that it was possible to achieve approximately 77% accuracy. The results demonstrate the effectiveness of the application when using techniques assisted by computers, and when using the methodology described in championships or other similar games that require the definition of strategies.

Although the electrical benefits are greatly increasing in miniaturized integrated circuits, their corresponding design and reliability issues are also being raised. This work aims at the multiphysics simulation of integrated circuits that allows the designer to monitor the electrical, thermal and mechanical long term behaviour of the circuit from its early design stages. The multi-physics simulation tool is based on the direct method where three networks, i.e. an electrical, a thermal and a mechanical network, are directly linked and simulated with a unique circuit simulator. The tool was developed in a standard CAD environment, i.e. Cadence®. The way the three networks are built is described. In addition, to achieve multiphysics simulations, conventional CMOS models have to be replaced by specific multiphysics models that take additional physical effects into account, such as thermal effects, hot carriers induced ageing and their impact on the device performances. The modelling approaches as well as some simulation results are provided. Finally, the paper discusses the remaining prospective work to be able to perform electro-thermo-mechanical simulations of complex integrated systems.

A new electro-thermal compact model of MOSFET that takes the channel hot carriers (CHC) effects on the transistor performances into account, including degradation and recovery, is proposed in this paper. The new model deals with the mobility degradation as well as the threshold voltage drift and recovery related to the Si/SiO 2 interface traps density. The substrate current, indicator of the device degradation under CHC is also provided in this model. The model is validated with simulations of a single transistor and at a chip level under various stress conditions. Thanks to our electro-thermal simulation tool and to this model, we can predict circuit degradation and recovery at different electrical and thermal stress conditions.

The focus of this study is to characterize the representational practices of engineering graduate students who were involved in using computational and analytical mathematical models to solve a complex battery system design problem. The research question of this study is: How do students develop and use representational artifacts, while using mathematical or computer simulation models, for articulating their solutions to a complex battery system design problem? Results of this study provide descriptions of students representational artifacts produced in each of the stages of the problem solving process. The outcome of the study provides a framework for future studies using a larger sample size for investigating the role of mathematical and computational models in supporting students' problem solving processes in engineering education.

An electro-thermal compact model of MOSFET which takes the hot carriers effects into account is presented in this paper. This new compact model evaluates the threshold voltage shift as well as the mobility reduction induced by the increase of the density of states at the Si/SiO2 interface produced by hot carriers. This physical effect depends on the biasing conditions and the temperature of the device. Results obtained on a single transistor are presented and compared to experimental results. Electro-thermal simulations at chip level are presented through a circuit dedicated to effective aging evaluation. Simulation results clearly show how the temperature reduces the lifetime of circuits. This new electro-thermal compact model coupled to our electro-thermal simulation tool offers the possibility to evaluate the lifetime of analog CMOS circuit.

Implant free (IF) heterostructure MOSFETs, considered as possible replacement of Si MOSFETs beyond the 16 nm technology generation, can take advantage of the high mobility in III-V materials to allow operation at very high speed and low power. We present a 3D parallel drift-diffusion device simulator developed to study the intrinsic parameter fluctuations affecting the behaviour of these devices. The parallel performance of the simulator is also analysed. Numerical results show super-linear efficiency on up to 16 processors.

A simplified model for the joint probability density function (PDF) of the magnitude and phase angle of the reflection coefficient of a first-order autoregressive (AR) process is proposed. The distribution is based on the inversion of the moment generating function (MGF) of the estimated autocorrelations under two simplifying assumptions: (a) the process is circular, and (b) the sample size is moderately large. The first hypothesis simplifies the computation of the MGF, and the second one allows to employ saddlepoint methods to approximate the integrals involved in the derivation, resulting in a fairly simple expression for the PDF. Further work on this is carried out so as to obtain the marginal distributions of both the magnitude and the phase of the parameter. These latter PDFs are compared favorably to the usual asymptotic (Gaussian) approach. >