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This paper investigates the Random Telegraph Signal (RTS) in Single Photon Avalanche Diodes (SPADs). The test-chip features SPADs with different architectures implemented in 150 nm CMOS technology. The test-chip has been irradiated with 21 MeV proton beam. RTS occurrence probability has been investigated in two different architectures. RTS measurements allowed to investigate the defect responsible for RTS phenomenon.

We investigated the radiation tolerance of a Single-Photon Avalanche Diode (SPAD) device manufactured using a 150-nm CMOS process. CMOS SPADs have been studied in view of utilization as photo-detectors in future space missions. An irradiation campaign has been carried out on several test chips containing SPAD arrays with different dimensions. Samples have been exposed to different displacement damage dose. The dark count rate (DCR) characterization as a function of the delivered proton fluence has showed a significant increase in mean DCR, providing the limits of operability of such devices in a space environment. Annealing and cooling have been investigated as possible damage mitigation approaches.

The Josephson effect in a molecular structure mimicking a benzene molecule (C6H6) placed between two nanometric superconducting electrodes is theoretically studied. In the tight bindingmodel, the Bogoliubov-de Gennes equations are solved to derive the Andreev reflection coefficient and hence the dc Josephson current. Two effects are pointed out: the quantum interference effect on the supercurrent due to the presence of two branches in the molecule and a on-resonance off -resonance state operation in the presence of an applied gate voltage. The results provide an insight on the molecular electronics devices in the case of superconducting nano-electrodes.