1. Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
- Author
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Necmi Biyikli, Vladyslav Matkivskyi, Nata Liakhova, Alexander Ovsianitsky, Ali Haider, Vladimir Osinsky, Dmitry Kotov, Alexander Tsymbalenko, Petro Deminskyi, and Bıyıklı, Necmi
- Subjects
Materials science ,Thin films ,GaN thin films ,Analytical chemistry ,Oxide ,Native oxides ,chemistry.chemical_element ,Gallium nitride ,02 engineering and technology ,Time duration ,01 natural sciences ,Oxygen ,GaN ,chemistry.chemical_compound ,Hydrofluoric acid ,Contamination ,X-ray photoelectron spectroscopy ,Electrical resistivity and conductivity ,0103 physical sciences ,Nanotechnology ,High resolution ,Oxide films ,Thin film ,Oxygen impurity ,HCPA ALD ,010302 applied physics ,HF treatment ,021001 nanoscience & nanotechnology ,Air conditioning ,chemistry ,Oxygen contamination ,0210 nano-technology - Abstract
Date of Conference: 19-21 April 2016 The paper consider oxygen contamination of HCPA ALD grown GaN films under an air conditioning and during different time duration. High resolution XPS analysis of HCPA ALD grown GaN films after diluted 1:10 HF(41 %) : H2O and undiluted HF (41 %) influence on oxygen impurities was investigated. Lesser oxygen impurities have been observed. Better resistivity to oxygen atoms of GaN thin films after diluted HF solution treatment was achieved compared to undiluted HF treatment and without treatment.
- Published
- 2016
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