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In this paper, we propose a Fast Text Detection (FTD) algorithm to automatically identify the text and line art pixels in scanned monochromatic and color documents for enhancing text in printed documents. To simulate the scanning operation, the input image is converted from the RGB space to a Luminance-Chrominance space and is then divided into individual strips. This is followed by a low pass filtering operation on the input strips for removing high frequency noise and to reduce processing time. An edge detection scheme is then applied to the blurred strips to generate corresponding edge-strips. The edge-strips are then subjected to a morphological operation and an edge-based adaptive thresholding simultaneously and the resulting two output strips are merged together to obtain the final candidate text plane. In the text enhancement operation, the original image is first converted into LCH space and the pixels corresponding to the detected text pixels are enhanced via a clipping operation in the L and C channel. This algorithm is highly efficient in terms of memory usage and processing speed and is thus suited to run effectively in low-cost embedded devices.

JavaScript injection is inserting unwanted JavaScript into Web pages with the intent on violating the security and privacy standards of the Web pages. There are a number of techniques that have been developed for the detection and prevention of JavaScript injection, and all have performance costs. While the performance issues of the JavaScript injection detection techniques have been mainly studied in running systems, we propose a simulation approach using UML SPT and JavaSim. The new approach not only reduces the cost for such analysis but also provides a framework for modeling injection detection techniques and analyzing the performance implications of design decisions.

We describe the instrument architecture of the Johns Hopkins University-led CLASS instrument, a groundbased cosmic microwave background (CMB) polarimeter that will measure the large-scale polarization of the CMB in several frequency bands to search for evidence of inflation.

The operational space for quantitative analysis of a range of materials has been investigated with local electrode atom probe equipped with a high pulse repetition rate voltage pulse generator and a ultrafast pulsed laser. This operating space has been explored with the following systems: a binary alloy composed of elements with dramatically different evaporations fields; a material with a single isotope and a low fraction of a solute; a multi-element commercial alloy; and highly resistive material. The materials chosen for this study included an Fe-3.25% Si alloy, aluminium alloy, a nickel based superalloy, a zirconium-based alloy and a semiconductor

This paper proposes obtaining structural information by directly imaging offsets between neighboring atom positions after reconstruction. This technique requires much less memory and CPU processing time than either FT implementation described above. Additionally, in certain situations position-dependent reconstruction aberrations can be estimated across much of the field of view by direct examination of peak shapes in the resulting 3D spatial distribution functions

Summary form only given. With the introduction of the local electrode atom probe, unique problems are presented with regard to the reconstruction, visualization and analysis of large data sets at the near-atomic scale. Imago's IVAS software provides a suite of exciting solutions to these problems. Current functionality allows for analysis and visualization of individual ions as well as the visualization and analysis of data in concentration or density space using techniques allowing for isosurfacing and volume rendering. In addition to visualization capabilities, many quantitative capabilities are available including interface roughness analysis and proximity histogram analysis.

In this paper, recent trends in atom probe instrumentation were described. Also, examples of specific applications were provided. An aluminum field desorption image the demonstrates the wide field-of-view (FOV) capability of the recently developed atom probe detector was presented. The voltage pulsing and laser pulsing modes for metal and semiconductor materials were compared. The combination of pulsed laser atom probe and the expanded FOV facilitate the development of breakthrough applications in semiconductor materials such as dopant profile analysis were also shown

The addition of high speed laser pulsing and a local electrode geometry has transformed the 3D atom probe into a characterization tool that is capable of analyzing Si-based nanostructures on an atom-by-atom basis (K. Thompson, 2005 and K. Thompson, 2006) . Doped and undoped SiGe structures were successfully analyzed in three dimensions with the laser assisted local electrode atom probe (L2EAP). The results correlate favorably to secondary ion mass spectrometry (SIMS). Advantages and unique capabilities of the atom-probe are described