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Your search keyword '"D. A. Pawlik"' showing total 1 results
Start Over Author "D. A. Pawlik" Publisher ieee
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1. Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

Author

R. Krom, D. J. Pawlik, S. Muhkerjee, S. Pandharpure, S. K. Kurinec, S-Y. Park, R. Yu, R. Anisha, P. R. Berger, P. E. Thompson, and S. L. Rommel

Subjects
Materials science, Molecular beam epitaxial growth, business.industry, Annealing (metallurgy), Optoelectronics, Peak current, business, Molecular beam epitaxy, Diode
Abstract

This study reports a Si RITD whose characteristics improve with increasing anneal time, resulting in a peak current density (JP) and PVCR up to 2.97 kA/cm2 and 3.08, respectively.

Published
2007
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