Search

Formation of the domain structure by ion beam irradiation was studied in thermally depolarized Ce-doped strontium barium niobate single crystals covered by a dielectric layer. Three types of irradiation regimes were used: dot exposure, stripe exposure, and line exposure. The dependences of the domain size and depth on the irradiated dose were measured. The circular shape of the isolated domains with partially switched broad domain boundary was obtained. Isotropic domain growth was attributed to the step generation at the wall by merging with the residual nanodomains that appeared after thermal depolarization. The obtained linear dose dependence of the switched area was attributed to the screening of the depolarization field by the injected charge. The shape distortion of the domains growing in the neighborhood with already created ones was attributed to the electrostatic interaction of the approaching charged domain walls. The obtained results can be applied for the creation of precise domain patterns with arbitrary orientation and shape to produce nonlinear optical devices with improved characteristics, including electrically tunable diffractive optical elements. [ABSTRACT FROM AUTHOR]

In integrated photonics, the precise knowledge of the waveguides refractive index profile is mandatory for the modeling of photonic chips and therefore implementing innovative circuits. Usual index profile determination relies on effective index measurement of propagating modes in planar waveguides coupled with numerical fitting tools. In this paper we propose an alternative technique based on the characterization of the second harmonic generation signature of a nonlinear waveguide. We include the characterization of high-order spatial modes showing their relevance to probe both vertical and lateral distributions. We finally provide an explicit profile ready-to-use for modeling soft-proton exchanged waveguides in lithium niobate and we test its prediction capability. [ABSTRACT FROM AUTHOR]

The formation of the domain structure by electron beam irradiation in thermally depolarized Ce-doped strontium barium niobate single crystals with free surface and surface covered by a dielectric layer has been studied. The dependences of the domain sizes and domain depth on the irradiated dose have been measured. The circular shape of the isolated domains was obtained. The isotropic domain growth was attributed to step generation at the wall as a result of merging with the residual nanodomains which existed after thermal depolarization. The linear dose dependence of the switched area was attributed to the screening of the depolarization field by the injected charge. The electrostatic interaction of the approaching charged domain walls was revealed. The better quality of the domain patterns was achieved in the samples with electron localization in the dielectric layer. The obtained results can be applied for the creation of precise domain patterns with arbitrary orientation and shape to produce nonlinear optical devices with improved characteristics. [ABSTRACT FROM AUTHOR]