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CNT was transferred onto the graphene layer and the field emission property of this hybrid structure was tested by a diode structure device. Compared with the CNT directly grown on the silicon substrates, the hybrid emitter shows better performance in the field emission properties, such as high emission current. The results provide an efficient way to improve the field emission property of CNT by using graphene layer.

The growth of graphite film on copper foil by plasma enhanced chemical vapor deposition was achieved at the temperature as relatively low as 800□. The obtained sample was characterized by SEM and Raman spectra. The results show that the transparent continuous graphite film can be obtained by PECVD.

A good quality graphene is transferred onto honeycomb-like CNTs arrays with inner supporting CNTs. The efficient field emission is demonstrated due to a high aspect ratio protrusions and graphene crack edges. A high efficient current density about 1.2 mA/cm2 at threshold electric field of 7.8 Y/μm with a turn-on electric field of 1.8 Y/μm at the current density of 10 μA/cm2 is observed due to high localized electric field. Stable field emission is tested in a vacuum chamber. The results are of significance to the development of Graphene based field emitters.

Zinc oxide was directly grown on the graphene layer by the hydrothermal synthesis method, and the field emission property of this hybrid structure was tested by a diode structure device. Compared with the Zinc oxide directly grown on the silicon substrates, the hybrid emitter shows better performance in the field emission properties, including low turn-on field, threshold field and high emission current. The results provide an efficient way to improve the field emission property of ZnO by using graphene layer.