160 results on '"Banerjee, Sanjay K."'
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2. D-band frequency memristor switch based on monolayer boron nitride
3. Tunnel Barrier Thickness, Interlayer Rotational Alignment, and Top Gating Effects on ReS2/hBN/ReS2 Resonant Interlayer Tunnel Field Effect Transistors
4. Neural Network Assisted Compact Model for Accurate Characterization of Cycle-to-cycle Variations in 2-D $h$-BN based RRAM devices
5. Monte Carlo Study of Si, Ge, and In0.53Ga0.47As n-Channel FinFET Scaling: Channel Orientation, Quantum Confinement, Doping, and Contacts.
6. Enhancement of Resonance by the Use of Multiple Tunnel Barriers in Bilayer Graphene-Based Interlayer Tunnel Field Effect Transistors
7. Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect Engineering
8. Machine learning for variability aware statistical device design: The case of perpendicular spin-transfer-torque random access memory
9. Improvement in Surface Passivation of c-Si Using Gradient-Layered a-Si:H Film for High Efficiency Silicon Heterojunction Solar Cells
10. State-of-the-art large area CVD MoS2 based RF electronics
11. Effect of rotational misalignment on interlayer coupling in a graphene/hBN/graphene van der Waal's heterostructure
12. Full-band simulations of single-particle resonant tunneling in transition metal dichalcogenide-based interlayer tunneling field-effect transistors
13. Towards wafer scale monolayer MoS2 based flexible low-power RF electronics for IoT systems
14. Room temperature gate-tunable negative differential resistance in MoS2/hBN/WSe2 heterostructures
15. High-frequency prospects of 2D nanomaterials for flexible nanoelectronics from baseband to sub-THz devices
16. Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study
17. Impact of gate oxide complex band structure on n-channel III–V FinFETs
18. Write error rate in spin-transfer-torque random access memory including micromagnetic effects
19. Bilayer Pseudospin Junction Transistor (BiSJT) for “Beyond-CMOS” Logic.
20. Short-Term Relaxation in HfOx/CeOx Resistive Random Access Memory With Selector.
21. Laser Spike Annealing for Shallow Junctions in Ge CMOS.
22. Interplay among Bilayer pseudoSpin field-effect transistor (BiSFET) performance, BiSFET scaling and condensate strength
23. Density-functional-theory-based study of monolayer MoS2 on oxide
24. Semi-classical ensemble Monte Carlo simulator using innovative quantum corrections for nano-scale n-channel FinFETs
25. Improved cleaning process for post-texture surface contamination removal for single heterojunction solar cells on ∼25µm thick exfoliated and flexible mono-crystalline silicon substrates
26. Effect of HfO2 and Al2O3 on monolayer MoS2 electronic structure
27. Impact of gate oxide complex band structure on n-channel III–V FinFETs.
28. Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study.
29. Theoretical study of the spontaneous electron-hole exciton condensates between n and p-type MoS2 monolayers, toward beyond CMOS applications.
30. Quantum transport simulations on the feasibility of the bilayer pseudospin field effect transistor (BiSFET)
31. Comparison of ballistic transport characteristics of monolayer transition metal dichalcogenides (TMDs) MX2 (M = Mo, W; X = S, Se, Te) n-MOSFETs
32. Quantum transport simulation of Bilayer pseudoSpin Field-Effect Transistor (BiSFET) with tight-binding hartree-fock model
33. Full-band quantum transport simulations of monolayer MoS2 transistors: Possibility of negative differential resistance
34. Write Error Rate of Spin-Transfer-Torque Random Access Memory Including Micromagnetic Effects Using Rare Event Enhancement.
35. High Phosphorus Dopant Activation in Germanium Using Laser Spike Annealing.
36. Novel BF+ Implantation for High Performance Ge pMOSFETs.
37. Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts.
38. Bilayer graphene vertical tunneling field effect transistor
39. Possible applications of topological insulator thin films for tunnel FETs
40. Exfoliated thin, flexible monocrystalline germanium heterojunction solar cells
41. Germanium nMOSFETs with GeO2 Passivation and n+/p Junctions Formed by Spin-On Dopants
42. Graphene field-effect transistors with self-aligned spin-on-doping of source/drain access regions
43. Graphene frequency doubler with record 3GHz bandwidth and the maximum conversion gain prospects
44. VTH shift mechanism in dysprosium (Dy) incorporated HfO2 gate nMOS devices
45. Device and circuit performance evaluation and improvement of SiGe Tunnel FETs
46. Neural network modeling of degradation of solar cells
47. Effects of InP barrier layer thicknesses and different ALD oxides on device performance of In0.7Ga0.3As MOSFETs
48. Retention modeling of nanocrystalline flash memories: A Monte Carlo approach
49. Hole band anisotropy effect on ON-state performance of biaxial compressive strained SiGe-based short channel QW pMOSFETs: Experimental observations
50. Atomistic Simulation of Band-to-Band Tunneling in III-V Nanowire Field-Effect Transistors
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